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公开(公告)号：US20230370783A1
公开(公告)日：2023-11-16
申请号：US18356246
申请日：2023-07-21
Inventor： CHUN-WEN CHENG , CHUN YIN TSAI , CHIA-HUA CHU
CPC classification number: H04R17/02 , B81B3/0021 , B81C1/00158 , H04R2201/003 , B81B2203/0127 , B81B2203/04 , B81B2201/0257
Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern includes: first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region; and second lines extending from the anchored region of the membrane toward the central region of the membrane, each of the first lines or each of the second lines including non-straight lines.
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公开(公告)号：US20210087052A1
公开(公告)日：2021-03-25
申请号：US17114403
申请日：2020-12-07
Inventor： CHEN HSIUNG YANG , CHUN-WEN CHENG , CHIA-HUA CHU , EN-CHAN CHEN
Abstract: A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.
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公开(公告)号：US20220369041A1
公开(公告)日：2022-11-17
申请号：US17815249
申请日：2022-07-27
Inventor： CHUN-WEN CHENG , CHUN YIN TSAI , CHIA-HUA CHU
Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.
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公开(公告)号：US20180086624A1
公开(公告)日：2018-03-29
申请号：US15275976
申请日：2016-09-26
Inventor： CHUN-WEN CHENG , CHIA-HUA CHU , MING-DAO WU , TZU-HENG WU
CPC classification number: B81B3/0072 , B81B2201/0257 , B81C1/00158 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A MEMS device includes a substrate, a supporter, a first back plate, a second back plate and a diaphragm. The substrate has a cavity. The supporter is over the substrate. The first back plate is over the cavity and fixed on the supporter. The second back plate is over the cavity and fixed on the supporter. The diaphragm is between the first back plate and the second back plate. The diaphragm includes a first sub-diaphragm and a second sub-diaphragm over the cavity and fixed on the supporter.
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公开(公告)号：US20170081173A1
公开(公告)日：2017-03-23
申请号：US14861346
申请日：2015-09-22
Inventor： YU-CHIA LIU , CHIA-HUA CHU , CHUN-WEN CHENG
CPC classification number: B81C1/00182 , B81C2201/019 , B81C2203/0118
Abstract: The present disclosure provides a CMOS MEMS device. The CMOS MEMS device includes a first substrate, a second substrate, a first polysilicon and a second polysilicon. The second substrate includes a movable part and is located over the first substrate. The first polysilicon penetrates the second substrate and is adjacent to a first side of the movable part of the second substrate. The second polysilicon penetrates the second substrate and is adjacent to a second side of the movable part of the second substrate.
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Patent Agency Ranking
公开(公告)号：US20220333251A1
公开(公告)日：2022-10-20
申请号：US17844080
申请日：2022-06-20
Inventor： MING-TA LEI , CHIA-HUA CHU , HSIN-CHIH CHIANG , TUNG-TSUN CHEN , CHUN-WEN CHENG
Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, a conductor layer over the substrate, wherein the conductor layer includes a conductive pattern including a plurality of openings, the openings being arranged in a repeating pattern, an insulating layer in the plurality of openings and over a top surface of the conductive pattern, wherein the conductive pattern is embedded in the insulating layer, and a gas sensing film over a portion of the insulating layer.
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公开(公告)号：US20190062151A1
公开(公告)日：2019-02-28
申请号：US15687904
申请日：2017-08-28
Inventor： CHUN-WEN CHENG , CHI-HANG CHIN , JUNG-HUEI PENG , CHIA-HUA CHU , SHANG-YING TSAI
CPC classification number: B81B7/0067 , B81B7/0038 , B81B7/007 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2207/095 , B81C1/00269 , B81C99/0045 , B81C2203/0118
Abstract: A semiconductor device includes a first substrate, a second substrate bonded to the first substrate from a first surface of the second substrate, a third substrate bonded to the second substrate from a second surface of the second substrate, a cavity defined by the first substrate, the second substrate and the third substrate; and a viewer window provided in the third substrate and aligned with the cavity; wherein the inside of the cavity is observed through the viewer window.
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公开(公告)号：US20180346319A1
公开(公告)日：2018-12-06
申请号：US16046787
申请日：2018-07-26
Inventor： CHUN-WEN CHENG , CHIA-HUA CHU , FEI-LUNG LAI , SHIANG-CHI LIN
CPC classification number: B81B7/007 , B81B2201/0214 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81B2207/07 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00301 , B81C2203/035 , B81C2203/0792 , G01L9/0041 , G01L9/0042 , G01L9/0044 , G01L9/0045 , G01L9/0048 , G01N27/123
Abstract: A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.
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公开(公告)号：US20170183222A1
公开(公告)日：2017-06-29
申请号：US15457498
申请日：2017-03-13
Inventor： JUNG-HUEI PENG , CHIA-HUA CHU , FEI-LUNG LAI , SHIANG-CHI LIN
IPC: B81C1/00
CPC classification number: B81C1/00238 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81C1/00285 , B81C2201/0125 , B81C2201/0154 , B81C2201/019 , B81C2203/0118 , B81C2203/035 , B81C2203/0792
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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公开(公告)号：US20240271287A1
公开(公告)日：2024-08-15
申请号：US18637490
申请日：2024-04-17
Inventor： MING-TA LEI , CHIA-HUA CHU , HSIN-CHIH CHIANG , TUNG-TSUN CHEN , CHUN-WEN CHENG
CPC classification number: C23F4/00 , G01N27/128 , G01N33/0075
Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, an insulating layer over the substrate, a conductor layer over and in contact with a top surface of the substrate, and a gas sensing film. The conductor layer includes a conductive pattern having a plurality of openings, and the conductive pattern is embedded in the insulating layer. The gas sensing film is formed over a portion of the conductive pattern.
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