公开(公告)号：US20170287513A1

公开(公告)日：2017-10-05

申请号：US15084956

申请日：2016-03-30

Applicant: TDK Corporation

Inventor： Koji SHIMAZAWA ,  Shuji OKAME ,  Yoshihiro TSUCHIYA ,  Takafumi KOBAYASHI

IPC: G11B5/39 ,  G11B5/48

CPC classification number: G11B5/314 ,  G11B5/012 ,  G11B5/127 ,  G11B5/187 ,  G11B5/313 ,  G11B5/3133 ,  G11B5/6088 ,  G11B2005/0021

Abstract: A thermal assisted magnetic recording head that performs magnetic recording while locally heating a magnetic recording medium includes: a plasmon generator that generates a surface plasmon and that generates near-field light from the surface plasmon on a front end surface positioned on an air bearing surface opposing the magnetic recording medium; a dielectric body layer positioned around the plasmon generator; and an adhesion layer positioned between the plasmon generator and the dielectric body layer. The adhesion layer is made from at least one of IrOx, RuOx, NiOx and CoOx.

公开(公告)号：US20140293473A1

公开(公告)日：2014-10-02

申请号：US13853293

申请日：2013-03-29

Applicant: TDK Corporation

Inventor： Shohei KAWASAKI ,  Shuji OKAME ,  Takayasu KANAYA ,  Satoshi MIURA ,  Kenzo MAKINO ,  Takumi YANAGISAWA ,  Takahiko MACHITA ,  Masashi SANO ,  Hideyuki UKITA

IPC: G11B5/39

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

Abstract translation: 薄膜磁头包括自旋阀膜，其包括磁化自由层，磁化固定层和设置在无磁化和被钉扎层之间的非磁性间隔层，以及设置在两者的一对侧层 自旋阀膜的边缘在磁道宽度方向上并且至少在磁化自由层和磁化固定层附近。 每个侧层具有偏置磁场施加层，该偏置磁场施加层包括软磁性层，并且在轨道宽度方向上向磁化自由层施加偏置磁场，并且位于自旋阀膜与偏置之间的间隙层 磁场施加层，并且侧层至少在磁化钉扎层附近具有压应力。

公开(公告)号：US20250098547A1

公开(公告)日：2025-03-20

申请号：US18470708

申请日：2023-09-20

Applicant: TDK CORPORATION

Inventor： Shuji OKAME ,  Tomoyuki SASAKI ,  Zhenyao TANG

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/85

Abstract: The magnetic memory of the present disclosure comprises a plurality of magnetoresistive effect elements. Each of the magnetoresistive effect elements comprises a reference layer, a magnetization free layer, a tunnel barrier layer provided between the reference layer and the magnetization free layer, a first cap layer provided on the magnetization free layer, a second cap layer; and a ferromagnetic layer provided between the first cap layer and the second cap layer. The ferromagnetic layer has a thickness less than a thickness of the magnetization free layer.

公开(公告)号：US20140242728A1

公开(公告)日：2014-08-28

申请号：US13777352

申请日：2013-02-26

Applicant: TDK CORPORATION

Inventor： Hitoshi HATATE ,  Atsuyoshi TSUNODA ,  Makoto FUKUI ,  Shuji OKAME ,  Ken FUJII

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magnesium oxide film is wet etched by using an etchant containing an aqueous ammonia solution.

Abstract translation: 磁阻器件包括包括金属层的MR元件和由氧化镁制成并与MR元件接触的绝缘部分。 制造磁阻器件的方法包括在形成绝缘部分的过程中除去由氧化镁形成的不想要的氧化镁膜的步骤。 在该步骤中，通过使用含有氨水溶液的蚀刻剂湿法蚀刻不需要的氧化镁膜。

公开(公告)号：US20140177104A1

公开(公告)日：2014-06-26

申请号：US13727341

申请日：2012-12-26

Applicant: TDK CORPORATION

Inventor： Hideyuki UKITA ,  Kenta HARA ,  Kenkichi ANAGAWA ,  Yosuke ANTOKU ,  Masashi SANO ,  Shuji OKAME ,  Masaya KATO

IPC: G11B5/39

CPC classification number: G11B5/1278 ,  G11B5/235 ,  G11B5/3116 ,  G11B5/315

Abstract: A trailing shield is provided on a trailing side of a magnetic pole with a non-magnetic gap layer in between, and an intermediate layer having negative uniaxial magnetocrystalline anisotropy is provided between the non-magnetic gap layer and the trailing shield. The intermediate layer has a magnetic property in which an easy axis of magnetization is provided in an in-plane direction and thus magnetization is likely to occur in that direction, whereas a difficult axis of magnetization is provided in a direction intersecting the in-plane direction and thus magnetization is less likely to occur in that direction. Accordingly, magnetic flux becomes difficult to excessively flow from the magnetic pole into the trailing shield.

Abstract translation: 尾部屏蔽设置在磁极的后侧，其间具有非磁隙层，并且在非磁隙层和后屏蔽之间设置具有负单轴结晶各向异性的中间层。 中间层具有磁特性，其中容易的磁化轴在面内方向上提供，因此可能在该方向上发生磁化，而在与面内方向交叉的方向上提供难度的磁化轴 因此磁化不太可能在该方向上发生。 因此，磁通变得难以从磁极过渡到后挡板。