公开(公告)号：US3914127A

公开(公告)日：1975-10-21

申请号：US41851373

申请日：1973-11-23

Applicant: TEXAS INSTRUMENTS INC

Inventor： BUSS DENNIS D ,  REINBERG ALAN R

IPC: H01L21/316 ,  H01L23/29 ,  H01L29/49 ,  H01L29/768 ,  B44D1/18 ,  C23C15/00

CPC classification number: H01L29/768 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02274 ,  H01L21/31612 ,  H01L23/291 ,  H01L29/495 ,  H01L29/4983 ,  H01L2924/0002 ,  Y10S438/945 ,  H01L2924/00

Abstract: Methods of making charge-coupled devices are disclosed, which include deposition of a thin, highly insulating coating of an oxide or nitride of a metal or semi-metal on a patterned first metal electrode layer. The insulating layer is plasma deposited, and a second metal electrode layer is then deposited and patterned. In the illustrated embodiment, the first metal layer is patterned in the same reactor in which the insulating coating is applied, eliminating handling of the device immediately prior to the critical step of deposition of the thin insulating coating.

Abstract translation: 公开了制造电荷耦合器件的方法，其包括在图案化的第一金属电极层上沉积金属或半金属的氧化物或氮化物的薄的高度绝缘的涂层。 绝缘层被等离子体沉积，然后沉积和图案化第二金属电极层。 在所示实施例中，在施加绝缘涂层的相同的反应器中对第一金属层进行图案化，在紧邻沉积薄绝缘涂层的关键步骤之前消除了器件的处理。