公开(公告)号：US3593190A

公开(公告)日：1971-07-13

申请号：US3593190D

申请日：1969-04-16

Applicant: TEXAS INSTRUMENTS INC

Inventor： REINBERG ALAN R

IPC: H01S3/06 ,  H01S3/0959 ,  H01S3/18

CPC classification number: H01S3/06 ,  H01S3/0959

Abstract: An electron beam pumped laser wherein the radiating crystal comprises a semiconductor wafer and a mosaic array of radiating elements. Each radiating element in the array emits radiation in a direction coinciding with the axis of the pumping electron beam. Stimulated emission transverse to the pumping electron direction is suppressed by dimensioning each radiating element to prevent gain in the transverse direction. The mosaic of radiating elements may be formed by etching or cutting slots in a semiconductor slice or by direct growth on the semiconductor slice.

公开(公告)号：US3914127A

公开(公告)日：1975-10-21

申请号：US41851373

申请日：1973-11-23

Applicant: TEXAS INSTRUMENTS INC

Inventor： BUSS DENNIS D ,  REINBERG ALAN R

IPC: H01L21/316 ,  H01L23/29 ,  H01L29/49 ,  H01L29/768 ,  B44D1/18 ,  C23C15/00

CPC classification number: H01L29/768 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02274 ,  H01L21/31612 ,  H01L23/291 ,  H01L29/495 ,  H01L29/4983 ,  H01L2924/0002 ,  Y10S438/945 ,  H01L2924/00

Abstract: Methods of making charge-coupled devices are disclosed, which include deposition of a thin, highly insulating coating of an oxide or nitride of a metal or semi-metal on a patterned first metal electrode layer. The insulating layer is plasma deposited, and a second metal electrode layer is then deposited and patterned. In the illustrated embodiment, the first metal layer is patterned in the same reactor in which the insulating coating is applied, eliminating handling of the device immediately prior to the critical step of deposition of the thin insulating coating.

Abstract translation: 公开了制造电荷耦合器件的方法，其包括在图案化的第一金属电极层上沉积金属或半金属的氧化物或氮化物的薄的高度绝缘的涂层。 绝缘层被等离子体沉积，然后沉积和图案化第二金属电极层。 在所示实施例中，在施加绝缘涂层的相同的反应器中对第一金属层进行图案化，在紧邻沉积薄绝缘涂层的关键步骤之前消除了器件的处理。

公开(公告)号：US3900944A

公开(公告)日：1975-08-26

申请号：US42638473

申请日：1973-12-19

Applicant: TEXAS INSTRUMENTS INC

Inventor： FULLER CLYDE R ,  REINBERG ALAN R

IPC: H01L21/00 ,  H01L21/3213 ,  H01L23/522 ,  H01L23/532 ,  H01L21/283 ,  H01L21/308 ,  H01L21/312

CPC classification number: H01L23/53252 ,  H01L21/00 ,  H01L21/32134 ,  H01L21/32136 ,  H01L23/522 ,  H01L23/53242 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved method of forming interconnections on a semiconductor slice in which a barrier metal of TI:W or Ta is deposited followed by deposit of a conducting layer and then a masking layer of Ta after which the masking layer is patterned with photo-resist and plasma etched whereupon the conducting layer is sputter etched with the barrier layer then being removed to provide an interconnecting lead with sloping sides over which insulation and a second level of metallization may be applied without danger of problems at crossovers.

Abstract translation: 一种在半导体薄片上形成互连的改进方法，其中沉积TI：W或Ta的势垒金属，然后沉积导电层，然后沉积Ta的掩蔽层，之后用光刻胶和等离子体对掩模层进行图案化 蚀刻，然后用阻挡层溅射蚀刻导电层，然后被去除，以提供互连引线与倾斜的侧面，绝缘和第二级别的金属化可以在其上施加，而不会在交叉上出现问题。