公开(公告)号：US3659160A

公开(公告)日：1972-04-25

申请号：US3659160D

申请日：1970-02-13

Applicant: TEXAS INSTRUMENTS INC

Inventor： SLOAN BENJAMIN JOHNSTON JR ,  MARTIN BILLY M ,  CLEVENGER LOYD H ,  DUNN ROGER S

IPC: H01L21/764 ,  H01L23/535 ,  H01L15/00

CPC classification number: H01L21/764 ,  H01L23/535 ,  H01L2924/0002 ,  Y10S148/037 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/145 ,  H01L2924/00

Abstract: Orientation-dependent etching is employed in the fabrication of a monolithic semiconductor circuit network to provide electrical isolation and increased packing density, while minimizing collector series resistance and output capacitance. Collector contact to a transistor component is made by the direct metallization of a buried low-resistivity substrate region exposed by the preferential etching operation.

Abstract translation: 在制造单片半导体电路网络中采用方向依赖蚀刻，以提供电隔离和增加的封装密度，同时最小化集电极串联电阻和输出电容。 通过由优先蚀刻操作暴露的埋入的低电阻率基板区域的直接金属化，来形成与晶体管元件的集电极接触。