公开(公告)号：US3659160A

公开(公告)日：1972-04-25

申请号：US3659160D

申请日：1970-02-13

Applicant: TEXAS INSTRUMENTS INC

Inventor： SLOAN BENJAMIN JOHNSTON JR ,  MARTIN BILLY M ,  CLEVENGER LOYD H ,  DUNN ROGER S

IPC: H01L21/764 ,  H01L23/535 ,  H01L15/00

CPC classification number: H01L21/764 ,  H01L23/535 ,  H01L2924/0002 ,  Y10S148/037 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/145 ,  H01L2924/00

Abstract: Orientation-dependent etching is employed in the fabrication of a monolithic semiconductor circuit network to provide electrical isolation and increased packing density, while minimizing collector series resistance and output capacitance. Collector contact to a transistor component is made by the direct metallization of a buried low-resistivity substrate region exposed by the preferential etching operation.

Abstract translation: 在制造单片半导体电路网络中采用方向依赖蚀刻，以提供电隔离和增加的封装密度，同时最小化集电极串联电阻和输出电容。 通过由优先蚀刻操作暴露的埋入的低电阻率基板区域的直接金属化，来形成与晶体管元件的集电极接触。

公开(公告)号：US3570114A

公开(公告)日：1971-03-16

申请号：US3570114D

申请日：1969-02-27

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  MARTIN BILLY M

IPC: H01L21/00 ,  H01L23/29 ,  H01L27/06 ,  H01L29/04 ,  H01L49/02 ,  B01J17/00 ,  H01L1/16

CPC classification number: H01L23/29 ,  H01L21/00 ,  H01L27/0688 ,  H01L29/04 ,  H01L49/02 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S148/123 ,  Y10S148/124 ,  Y10S148/136 ,  Y10T29/49099 ,  H01L2924/00

Abstract: THIS SPECIFICATION DISCLOSES A METHOD OF FABRICATING AN INTEGRATED CIRCUIT CHARACTERIZED BY ELECTRONIC COMPONENTS BEING FORMED IN A POLYCRYSTALLINE SEMICONDUCTOR, SUCH AS

SILICON OR GERMANIUM, DEPOSITED AT LESS THAN 900*C. AND AT A RATE OF LESS THAN ONE MICRON PER MINUTE AND OVERLYING AN ISOLATION LAYER COVERING COMPONENTS FORMED IN A BASE REGION OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL. THE COMPONENTS IN THE POLYCRYSTALLINE SEMICONDUCTOR MAY EMPLOY JUNCTIONS AND MAY BE ACTIVE OR PASSIVE. MORE THAN ONE LAYER OF POLYCRYUSTALLINE SEMICONDUCTOR AND MORE THAN ONE ISOLATION LAYER MAY BE EMPLOYED.

公开(公告)号：US3519901A

公开(公告)日：1970-07-07

申请号：US3519901D

申请日：1968-01-29

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  MARTIN BILLY M

IPC: H01L21/00 ,  H01L23/29 ,  H01L27/06 ,  H01L29/04 ,  H01L49/02 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L23/29 ,  H01L21/00 ,  H01L27/0688 ,  H01L29/04 ,  H01L49/02 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S148/123 ,  Y10S148/124 ,  Y10S148/136 ,  Y10T29/49099 ,  H01L2924/00

公开(公告)号：US3860466A

公开(公告)日：1975-01-14

申请号：US19166671

申请日：1971-10-22

Applicant: TEXAS INSTRUMENTS INC

Inventor： WORKMAN WILTON L ,  MARTIN BILLY M

IPC: C23F1/02 ,  H01L21/00 ,  B29C17/08

CPC classification number: C23F1/02 ,  H01L21/00

Abstract: A method for selectively masking a substrate surface, as in the fabrication of a semiconductor device, which includes the steps of forming a first layer of a masking material, e.g., silicon dioxide, on a surface of the substrate, forming an adherent layer of a second masking material, e.g., silicon nitride, on the first layer, and then forming a second layer of silicon dioxide on the silicon nitride layer. Openings are formed extending through preselected locations in the second oxide layer to expose underlying regions in the silicon nitride layer in a preselected pattern. The portions of silicon nitride exposed through the openings are selectively removed to expose preselected portions of the underlying first oxide layer, and then the exposed portions of the first oxide layer are removed to define a composite diffusion mask exposing preselected portions of the surface of the silicon semiconducor body. Subsequent diffusion and metallization steps may be then effected to form a semiconductor device.

Abstract translation: 一种用于选择性地掩蔽衬底表面的方法，如在半导体器件的制造中，其包括以下步骤：在衬底的表面上形成掩模材料（例如，二氧化硅）的第一层，形成粘合层 在第一层上的第二掩模材料，例如氮化硅，然后在氮化硅层上形成第二层二氧化硅。 形成延伸穿过第二氧化物层中的预选位置的开口，以预选图案暴露在氮化硅层中的下面的区域。 通过开口暴露的氮化硅的部分被选择性地去除以暴露下面的第一氧化物层的预选部分，然后去除第一氧化物层的暴露部分以限定暴露硅表面的预选部分的复合扩散掩模 半导体体。 然后可以进行随后的扩散和金属化步骤以形成半导体器件。

公开(公告)号：US3351775A

公开(公告)日：1967-11-07

申请号：US36943264

申请日：1964-05-22

Applicant: TEXAS INSTRUMENTS INC

Inventor： COOK JR CHARLES R ,  MARTIN BILLY M

IPC: H03K5/135

CPC classification number: H03K5/135