公开(公告)号：US20210305050A1

公开(公告)日：2021-09-30

申请号：US16829862

申请日：2020-03-25

Applicant: Texas Instruments Incorporated

Inventor： Damien Thomas Gilmore ,  Jonathan P. Davis ,  Azghar H Khazi-Syed ,  Shariq Arshad ,  Khanh Quang Le ,  Kaneez Eshaher Banu ,  Jonathan Roy Garrett ,  Sarah Elizabeth Bradshaw ,  Eugene Clayton Davis

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/423 ,  H01L29/40

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

公开(公告)号：US20230420258A1

公开(公告)日：2023-12-28

申请号：US18346977

申请日：2023-07-05

Applicant: Texas Instruments Incorporated

Inventor： Damien Thomas Gilmore ,  Jonathan P. Davis ,  Azghar H Khazi-Syed ,  Shariq Arshad ,  Khanh Quang Le ,  Kaneez Eshaher Banu ,  Jonathan Roy Garrett ,  Sarah Elizabeth Bradshaw ,  Eugene Clayton Davis

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L21/28035 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4916

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

公开(公告)号：US10403424B2

公开(公告)日：2019-09-03

申请号：US15618353

申请日：2017-06-09

Applicant: Texas Instruments Incorporated

Inventor： Fuchao Wang ,  Yousong Zhang ,  Neal Thomas Murphy ,  Brian Zinn ,  Jonathan P. Davis

IPC: H01F7/06 ,  H01F10/30 ,  H01F17/00 ,  H01F41/04

Abstract: An integrated magnetic device has a magnetic core which includes layers of the magnetic material located in a trench in a dielectric layer. The magnetic material layers are flat and parallel to a bottom of the trench, and do not extend upward along sides of the trench. The integrated magnetic device is formed by forming layers of the magnetic material over the dielectric layer and extending into the trench. A protective layer is formed over the magnetic material layers. The magnetic material layers are removed from over the dielectric layer, leaving the magnetic material layers and a portion of the protective layer in the trench. The magnetic material layers along sides of the trench are subsequently removed. The magnetic material layers along the bottom of the trench provide the magnetic core.

公开(公告)号：US11742208B2

公开(公告)日：2023-08-29

申请号：US16829862

申请日：2020-03-25

Applicant: Texas Instruments Incorporated

Inventor： Damien Thomas Gilmore ,  Jonathan P. Davis ,  Azghar H Khazi-Syed ,  Shariq Arshad ,  Khanh Quang Le ,  Kaneez Eshaher Banu ,  Jonathan Roy Garrett ,  Sarah Elizabeth Bradshaw ,  Eugene Clayton Davis

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L21/28035 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4916

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

公开(公告)号：US20190341181A1

公开(公告)日：2019-11-07

申请号：US16512642

申请日：2019-07-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Fuchao Wang ,  Yousong Zhang ,  Neal Thomas Murphy ,  Brian Zinn ,  Jonathan P. Davis

IPC: H01F10/30 ,  H01F17/00 ,  H01F41/04

Abstract: An integrated magnetic device has a magnetic core which includes layers of the magnetic material located in a trench in a dielectric layer. The magnetic material layers are flat and parallel to a bottom of the trench, and do not extend upward along sides of the trench. The integrated magnetic device is formed by forming layers of the magnetic material over the dielectric layer and extending into the trench. A protective layer is formed over the magnetic material layers. The magnetic material layers are removed from over the dielectric layer, leaving the magnetic material layers and a portion of the protective layer in the trench. The magnetic material layers along sides of the trench are subsequently removed. The magnetic material layers along the bottom of the trench provide the magnetic core.

公开(公告)号：US11443879B2

公开(公告)日：2022-09-13

申请号：US16512642

申请日：2019-07-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Fuchao Wang ,  Yousong Zhang ,  Neal Thomas Murphy ,  Brian Zinn ,  Jonathan P. Davis

IPC: H01F10/00 ,  H01F10/30 ,  H01F17/00 ,  H01F41/04 ,  H01F27/24

Abstract: An integrated magnetic device has a magnetic core which includes layers of the magnetic material located in a trench in a dielectric layer. The magnetic material layers are flat and parallel to a bottom of the trench, and do not extend upward along sides of the trench. The integrated magnetic device is formed by forming layers of the magnetic material over the dielectric layer and extending into the trench. A protective layer is formed over the magnetic material layers. The magnetic material layers are removed from over the dielectric layer, leaving the magnetic material layers and a portion of the protective layer in the trench. The magnetic material layers along sides of the trench are subsequently removed. The magnetic material layers along the bottom of the trench provide the magnetic core.

公开(公告)号：US20180358163A1

公开(公告)日：2018-12-13

申请号：US15618353

申请日：2017-06-09

Applicant: Texas Instruments Incorporated

Inventor： Fuchao Wang ,  Yousong Zhang ,  Neal Thomas Murphy ,  Brian Zinn ,  Jonathan P. Davis

IPC: H01F27/245 ,  H01F41/02 ,  H01F1/147

CPC classification number: H01F10/30 ,  H01F17/0033 ,  H01F41/046

Abstract: An integrated magnetic device has a magnetic core which includes layers of the magnetic material located in a trench in a dielectric layer. The magnetic material layers are flat and parallel to a bottom of the trench, and do not extend upward along sides of the trench. The integrated magnetic device is formed by forming layers of the magnetic material over the dielectric layer and extending into the trench. A protective layer is formed over the magnetic material layers. The magnetic material layers are removed from over the dielectric layer, leaving the magnetic material layers and a portion of the protective layer in the trench. The magnetic material layers along sides of the trench are subsequently removed. The magnetic material layers along the bottom of the trench provide the magnetic core.