REFERENCE VOLTAGE GENERATION CIRCUITS AND RELATED METHODS

    公开(公告)号:US20210376718A1

    公开(公告)日:2021-12-02

    申请号:US16890537

    申请日:2020-06-02

    Abstract: Reference voltage generation circuits and related methods are disclosed. An example reference voltage generation circuit includes a voltage generating circuit including an enhancement mode (E-mode) gallium nitride (GaN) transistor, the voltage generating circuit to, in response to a first clock signal having a first phase, generate a first voltage associated with the E-mode GaN transistor, and, in response to a second clock signal having a second phase different from the first phase, generate a second voltage associated with the E-mode GaN transistor, and a switching capacitor circuit coupled to the voltage generating circuit, the switching capacitor circuit to generate a reference voltage based on a difference between the first voltage and the second voltage.

    BIAS GENERATION FOR POWER CONVERTER
    2.
    发明公开

    公开(公告)号:US20240313660A1

    公开(公告)日:2024-09-19

    申请号:US18141245

    申请日:2023-04-28

    CPC classification number: H02M3/33576 H02M1/0009 H02M1/0025 H02M1/36

    Abstract: A self-biasing circuit for power converters is disclosed. In an example, an apparatus includes a first transistor coupled between an inductor terminal and a ground terminal, and a second transistor coupled between the inductor terminal and a bias terminal. The first transistor has a first control terminal, and the second transistor has a second control terminal. In an example, the first and second transistors are configured to split a current at the inductor terminal. The apparatus further includes a controller having first and second control outputs, where the first control output is coupled to the first control terminal, the second control output is coupled to the second control terminal.

    HIGH-VOLTAGE DEPLETION-MODE CURRENT SOURCE, TRANSISTOR, AND FABRICATION METHODS

    公开(公告)号:US20220399328A1

    公开(公告)日:2022-12-15

    申请号:US17548426

    申请日:2021-12-10

    Abstract: A depletion-mode current source having a saturation current of sufficient accuracy for use as a pre-charge circuit in a start-up circuit of an AC-to-DC power converter is fabricated using an enhancement-mode-only process. The depletion-mode current source can be fabricated on the same integrated circuit (IC) as a gallium nitride field-effect transistor (FET) and resistive and capacitive components used in the start-up circuit, without affecting the enhancement-mode-only fabrication process by requiring additional masks or materials, as would be required to fabricate a depletion-mode FET on the same IC as an enhancement-mode FET. The current source includes a resistive patterned two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) channel coupled between two terminals and one or more metal field plates extending from one of the terminals and overlying the patterned area of the channel, the field plates being separated from the channel and from each other by dielectric layers.

    Enhancement mode startup circuit with JFET emulation

    公开(公告)号:US11621708B2

    公开(公告)日:2023-04-04

    申请号:US17314523

    申请日:2021-05-07

    Abstract: A startup circuit adapted to be coupled to an input voltage supply and operable to supply an output voltage at an output terminal, the startup circuit including: a first transistor having a first control terminal, a first current terminal and a second current terminal, the first current terminal adapted to be coupled to the input voltage supply and the second current terminal coupled to the output terminal; a precharge circuit having a first terminal, a second terminal and a third terminal, the second terminal adapted to be coupled to the input voltage supply and the third terminal coupled to the first control terminal; a current limiter coupled to the precharge circuit, the first control terminal and the second current terminal; a second transistor having a second control terminal, a third current terminal and a fourth current terminal, the third current terminal coupled to the precharge circuit and the second control terminal adapted to be coupled to a control signal; and a third transistor having a third control terminal, a fifth current terminal and a sixth current terminal, the fifth current terminal coupled to the first control terminal and the third control terminal is adapted to be coupled to the control signal.

    ENHANCEMENT MODE STARTUP CIRCUIT WITH JFET EMULATION

    公开(公告)号:US20200274530A1

    公开(公告)日:2020-08-27

    申请号:US16731847

    申请日:2019-12-31

    Abstract: A startup circuit includes an enhancement mode transistor with a drain coupled to a startup circuit input, a source coupled to a first node, and a gate coupled to a second node. The startup circuit includes a current limiting circuit that controls a current path between the second node and a startup circuit output node based on a current sense voltage signal representing a current through the enhancement mode transistor, and a voltage regulation circuit controls a voltage of the second node to regulate a startup circuit output voltage of the startup circuit output node.

    METHODS AND APPARATUS TO REGULATE TRANSISTOR SWITCHING

    公开(公告)号:US20250138567A1

    公开(公告)日:2025-05-01

    申请号:US18755318

    申请日:2024-06-26

    Abstract: An example apparatus includes: driver circuitry having a terminal; a capacitor having a terminal; diode circuitry having a first terminal and a second terminal; a transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the transistor coupled to the first terminal of the diode circuitry, the control terminal of the transistor coupled to the terminal of the capacitor and the second terminal of the diode circuitry; and current mirror circuitry having a first terminal and second terminal, the first terminal of the current mirror circuitry coupled to the terminal of the driver circuitry, the second terminal of the current mirror circuitry coupled to the second terminal of the transistor.

    ADJUSTABLE POWER FET DRIVER
    10.
    发明公开

    公开(公告)号:US20240146298A1

    公开(公告)日:2024-05-02

    申请号:US17977822

    申请日:2022-10-31

    CPC classification number: H03K17/6871 H03K5/13 H03K2005/00019

    Abstract: In described examples, an integrated circuit includes first and second current sources, first and second switches, a dV/dt phase detector, a control circuit, and source, gate, and drain terminals for coupling to, respectively, a source, gate, and drain of a power FET. The first switch is coupled between the first current source and the gate terminal. The second switch is coupled between the second current source and the gate terminal. The dV/dt phase detector detects a dV/dt phase of the power FET and outputs to the control circuit. The control circuit controls the first and second switches to perform a turn-on sequence of the power FET, including: closing the first switch while keeping the second switch open; and after receiving a signal from the dV/dt phase detector indicating the dV/dt phase has started, opening the first switch, and closing the second switch.

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