Plasma processing apparatus and plasma processing method

    公开(公告)号:US11646181B2

    公开(公告)日:2023-05-09

    申请号:US17376771

    申请日:2021-07-15

    IPC分类号: H01J37/32

    摘要: A plasma processing apparatus includes: a chamber; a substrate support provided inside the chamber and including an electrode, an electrostatic chuck provided on the electrode, and an edge ring that is disposed on the electrostatic chuck while surrounding the substrate placed on the electrostatic chuck; a radio-frequency power supply that supplies radio-frequency power for generating plasma from a gas within the chamber; a DC power supply that applies a negative DC voltage to the edge ring; and a controller that controls the radio-frequency power and the DC voltage. The controller controls the apparatus to execute a process including: (a) stopping application of the DC voltage while stopping supply of the radio-frequency power; and (b) starting the application of the DC voltage after a predetermined delay time elapses since the supply of the radio-frequency power.

    Matching device and plasma processing apparatus

    公开(公告)号:US10727028B2

    公开(公告)日:2020-07-28

    申请号:US16304370

    申请日:2017-05-17

    发明人: Natsumi Torii

    摘要: Provided is a matching device capable of realizing a high-speed matching operation. A matching device of an embodiment includes a series part, a parallel part, and one or more variable direct-current power sources. The series part includes a first diode having a variable capacitance and is provided between an input terminal of a radio frequency wave and an output terminal of a radio frequency wave. The parallel part includes a second diode having a variable capacitance and is provided between a node between the input terminal and the output terminal and a ground. The one or more variable direct-current power sources are provided to apply variable reverse bias voltages to the first diode and the second diode.

    Plasma processing apparatus and plasma processing method

    公开(公告)号:US10431433B2

    公开(公告)日:2019-10-01

    申请号:US16003954

    申请日:2018-06-08

    IPC分类号: H01J37/32

    摘要: In a plasma processing apparatus, a controller controls one or both of a first high frequency power supply and a second high frequency power supply to periodically stop the supply of one or both of the first high frequency power and the second high frequency power. The controller also controls a switching unit to apply a DC voltage to a focus ring from a first time after a predetermined period of time in which a self-bias voltage of a lower electrode is decreased from a start point of each period in which one or both of the first high frequency power and the second high frequency power are supplied and to stop the application of the DC voltage to the focus ring during each period in which the supply of one or both of the first high frequency power and the second high frequency power is stopped.