公开(公告)号：US20150357187A1

公开(公告)日：2015-12-10

申请号：US14725656

申请日：2015-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tamotsu MORIMOTO ,  Yusuke MURAKI ,  Kazuaki NISHIMURA

IPC: H01L21/02

CPC classification number: H01L21/02334 ,  H01L21/02057 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/3065 ,  H01L21/76892 ,  H01L29/66818

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract translation: 修改处理方法包括制备具有通过等离子体处理形成有损伤层的硅层的基板。 该方法还包括通过用含氟气体的第一工艺气体处理衬底来去除形成在硅层上的损伤层。

公开(公告)号：US20150072533A1

公开(公告)日：2015-03-12

申请号：US14479466

申请日：2014-09-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke MURAKI ,  Shigeru KASAI ,  Tomohiro SUZUKI

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/26 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/76802 ,  H01L21/76897

Abstract: Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.

Abstract translation: 提供一种蚀刻氧化硅膜的方法，其包括将含卤素元素的气体和碱性气体的混合气体提供到氧化硅膜的表面上; 改性氧化硅膜以产生反应产物; 并加热反应产物以除去反应产物。 使用一个室进行氧化硅膜的修饰和加热反应产物。 在加热反应产物时，通过加热单元选择性地加热反应产物。

公开(公告)号：US20160351390A1

公开(公告)日：2016-12-01

申请号：US15232260

申请日：2016-08-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tamotsu MORIMOTO ,  Yusuke MURAKI ,  Kazuaki NISHIMURA

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02334 ,  H01L21/02057 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/3065 ,  H01L21/76892 ,  H01L29/66818

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

公开(公告)号：US20210287906A1

公开(公告)日：2021-09-16

申请号：US17194808

申请日：2021-03-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke MURAKI

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01J37/305

Abstract: A method for processing a substrate on which silicon layers and silicon germanium layers are alternately disposed, includes: forming an oxide layer on a surface layer of a spacer layer based on an oxygen-containing gas radicalized using remote plasma, wherein the spacer layer having a low dielectric constant is formed at least on side surfaces of the silicon layers and the silicon germanium layers; and removing the formed oxide layer by etchir