公开(公告)号：US10734325B2

公开(公告)日：2020-08-04

申请号：US16662970

申请日：2019-10-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Long-Yi Chen ,  Jia-Hong Chu ,  Chi-Wen Lai ,  Chia-Ching Liang ,  Kai-Hsiung Chen ,  Yu-Ching Wang ,  Po-Chung Cheng ,  Hsin-Chin Lin ,  Meng-Wei Chen ,  Kuei-Shun Chen

IPC分类号： H01L23/544 ,  H01L21/67 ,  H01L21/66 ,  H01L21/033 ,  G03F9/00 ,  G03F7/20 ,  H01L21/768

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.

公开(公告)号：US10461037B2

公开(公告)日：2019-10-29

申请号：US15797953

申请日：2017-10-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Long-Yi Chen ,  Jia-Hong Chu ,  Chi-Wen Lai ,  Chia-Ching Liang ,  Kai-Hsiung Chen ,  Yu-Ching Wang ,  Po-Chung Cheng ,  Hsin-Chin Lin ,  Meng-Wei Chen ,  Kuei-Shun Chen

IPC分类号： H01L23/544 ,  H01L21/768 ,  H01L21/67 ,  H01L21/66 ,  H01L21/033 ,  G03F9/00 ,  G03F7/20

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.