公开(公告)号：US20210302833A1

公开(公告)日：2021-09-30

申请号：US17071004

申请日：2020-10-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  Chen-Yu LIU ,  Chih-Cheng LIU ,  Yi-Chen KUO ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: G03F7/004 ,  G03F7/00 ,  H01L21/033

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20210305047A1

公开(公告)日：2021-09-30

申请号：US17150356

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Lin WEI ,  Ming-Hui WENG ,  Chih-Cheng LIU ,  Yi-Chen KUO ,  Yen-Yu CHEN ,  Yahru CHENG ,  Jr-Hung LI ,  Ching-Yu CHANG ,  Tze-Liang LEE ,  Chi-Ming YANG

IPC: H01L21/033 ,  H01L21/308 ,  G03F1/22 ,  G03F7/20

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

公开(公告)号：US20230369048A1

公开(公告)日：2023-11-16

申请号：US18227231

申请日：2023-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Lin WEI ,  Ming-Hui Weng ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Yen-Yu Chen ,  Yahru Cheng ,  Jr-Hung Li ,  Ching-Yu Chang ,  Tze-Liang Lee ,  Chi-Ming Yang

IPC: H01L21/033 ,  H01L21/308 ,  G03F7/00 ,  G03F1/22

CPC classification number: H01L21/0332 ,  H01L21/3081 ,  G03F7/70033 ,  G03F1/22 ,  H01L21/0334

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

公开(公告)号：US20210302839A1

公开(公告)日：2021-09-30

申请号：US17150389

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Cheng LIU ,  Yi-Chen KUO ,  Jia-Lin WEI ,  Ming-Hui WENG ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: G03F7/16 ,  G03F7/11 ,  H01L21/027

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

公开(公告)号：US20250157818A1

公开(公告)日：2025-05-15

申请号：US18506864

申请日：2023-11-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Lin WEI ,  Ching-Yu CHANG

IPC: H01L21/027 ,  G03F7/038 ,  G03F7/32 ,  G03F7/38 ,  H01L21/311

Abstract: A method for forming a semiconductor device is provided. The methods includes forming a photoresist layer over a substrate. The photoresist layer includes a polymer and an photoacid generator (PAG). The polymer includes a polymer backbone, an etch resistance promoting group chemically bonded to the polymer backbone, and an acid labile group (ALG) chemically bonded to the etch resistance promoting group. The method further includes exposing a portion of the photoresist layer to a radiation to produce acid in exposed portion, baking the photoresist layer, resulting in cleavage of the ALG, and removing an portion of the photoresist layer to form a patterned photoresist layer.

公开(公告)号：US20230350302A1

公开(公告)日：2023-11-02

申请号：US17734975

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chung SU ,  Lilin CHANG ,  Jia-Lin WEI ,  Ching-Yu CHANG

IPC: G03F7/16 ,  G03F7/039 ,  G03F7/038 ,  H01L21/311

CPC classification number: G03F7/168 ,  G03F7/039 ,  G03F7/038 ,  H01L21/31144

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a photoresist layer over a substrate. The photoresist layer includes a polymer, a photoacid initiator and a crosslinker containing at least two crosslinking sites. The photoresist layer is then cured to crosslink the polymer, thereby forming a crosslinked polymer. Next, the photoresist layer is exposed to a radiation. An acid produced from exposure of the photoacid generator de-crosslinks the crosslinked polymer in exposed portions of the photoresist layer. The exposed portions of the photoresist layer are subsequently removed to form a patterned photoresist layer.

公开(公告)号：US20210305040A1

公开(公告)日：2021-09-30

申请号：US17150403

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen KUO ,  Chih-Cheng LIU ,  Ming-Hui WENG ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: H01L21/027 ,  H01L21/02

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.