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公开(公告)号：US10983005B2
公开(公告)日：2021-04-20
申请号：US15623665
申请日：2017-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kai Wu , Hung-Chih Hsieh , Kai-Hsiung Chen , Chih-Ming Ke , Yen-Liang Chen
Abstract: A spectroscopic overlay metrology system and corresponding spectroscopic overlay metrology methods are disclosed herein for improving overly measurement accuracy, optimizing overlay recipes, and/or minimizing (or eliminating) asymmetry-induced overly error from overlay measurements. An exemplary method includes generating a diffraction spectrum by an overlay target from incident radiation having more than one wavelength. The diffraction spectrum includes a plurality of positive ordered diffracted beams and a plurality of negative ordered diffracted beams that are separated by wavelength, such that the diffraction spectrum includes more than one wavelength of a positive order and a negative order. The method further includes collecting intensity information associated with the diffraction spectrum generated by the overlay target from the incident radiation, and generating overlay information from the collected intensity information, where the overlay information includes contributions from asymmetry-induced overlay error. In some implementations, the method includes optimizing an overlay recipe based on the generated overlay information.
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Patent Agency Ranking
公开(公告)号：US20190004220A1
公开(公告)日：2019-01-03
申请号：US15637910
申请日：2017-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
CPC classification number: G02B5/1866 , G02B5/18 , G02B5/1861 , G02F1/31 , G03F1/44 , G03F7/2024 , G03F7/70616 , G03F7/70633 , G03H1/26
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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公开(公告)号：US11656391B2
公开(公告)日：2023-05-23
申请号：US16882094
申请日：2020-05-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
CPC classification number: G02B5/1866 , G02B5/18 , G02F1/31 , G03F1/44 , G03F7/2024 , G03F7/70616 , G03F7/70633 , G03H1/26 , G02B5/1861
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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公开(公告)号：US20200284954A1
公开(公告)日：2020-09-10
申请号：US16882094
申请日：2020-05-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yem-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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公开(公告)号：US10663633B2
公开(公告)日：2020-05-26
申请号：US15637910
申请日：2017-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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公开(公告)号：US20180172514A1
公开(公告)日：2018-06-21
申请号：US15623665
申请日：2017-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kai Wu , Hung-Chih Hsieh , Kai-Hsiung Chen , Chih-Ming Ke , Yen-Liang Chen
CPC classification number: G01J3/28 , G01J3/2803 , G01J2003/2806 , G03F7/70616 , G03F7/70633 , G03F9/7065
Abstract: A spectroscopic overlay metrology system and corresponding spectroscopic overlay metrology methods are disclosed herein for improving overly measurement accuracy, optimizing overlay recipes, and/or minimizing (or eliminating) asymmetry-induced overly error from overlay measurements. An exemplary method includes generating a diffraction spectrum by an overlay target from incident radiation having more than one wavelength. The diffraction spectrum includes a plurality of positive ordered diffracted beams and a plurality of negative ordered diffracted beams that are separated by wavelength, such that the diffraction spectrum includes more than one wavelength of a positive order and a negative order. The method further includes collecting intensity information associated with the diffraction spectrum generated by the overlay target from the incident radiation, and generating overlay information from the collected intensity information, where the overlay information includes contributions from asymmetry-induced overlay error. In some implementations, the method includes optimizing an overlay recipe based on the generated overlay information.
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