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公开(公告)号：US11791141B2
公开(公告)日：2023-10-17
申请号：US16942577
申请日：2020-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Liang Chen
CPC classification number: H01J37/3476 , B08B5/00 , B08B13/00 , H01J37/32862 , H01J37/32981 , B08B2205/00 , H01J2237/0225
Abstract: The present disclosure provides embodiments of a system and method for detecting processing chamber condition. The embodiments include performing a wafer-less processing step in a processing chamber to determine the condition of the chamber walls. Based on an analysis of the residual gas resulting from the wafer-less processing step, an operator or a process controller can determine whether the chamber walls have deteriorated to such an extent as to be cleaned.
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公开(公告)号：US11656391B2
公开(公告)日：2023-05-23
申请号：US16882094
申请日：2020-05-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
CPC classification number: G02B5/1866 , G02B5/18 , G02F1/31 , G03F1/44 , G03F7/2024 , G03F7/70616 , G03F7/70633 , G03H1/26 , G02B5/1861
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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公开(公告)号：US11243475B2
公开(公告)日：2022-02-08
申请号：US17063184
申请日：2020-10-05
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yen-Liang Chen
Abstract: An overlay error measurement structure includes a lower-layer pattern disposed over a substrate, and an upper-layer pattern disposed over the lower-layer pattern and at least partially overlapping with the lower-layer pattern. The lower-layer pattern includes a plurality of first sub-patterns extending in a first direction and being arranged in a second direction crossing the first direction. The upper-layer pattern includes a plurality of second sub-patterns extending in the first direction and being arranged in the second direction. At least one of a pattern pitch and a pattern width of at least one of at least a part of the first sub-patterns and at least a part of the second sub-patterns varies along the second direction.
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公开(公告)号：US11119416B2
公开(公告)日：2021-09-14
申请号：US16439546
申请日：2019-06-12
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Che-Yuan Sun , Yen-Liang Chen , He Fan , Yen-Hung Chen , Kai Lin
IPC: G03F7/20
Abstract: A method includes forming a first overlay feature in a first dielectric layer over a first wafer; forming a second dielectric layer over the first overlay feature and the first dielectric layer; forming an opening in the second dielectric layer by at least using an exposure tool; forming a second overlay feature in the opening of the second dielectric layer, such that a first edge of the first overlay feature is covered by the second dielectric layer; directing an electron beam to the first and second overlay features and the second dielectric layer; detecting the electron beam reflected from the first overlay feature through the second dielectric layer and from the second overlay feature by a detector; obtaining, by a controller, an overlay error between the first overlay feature and the second overlay feature according to the reflected electron beam electrically connected to the detector.
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公开(公告)号：US10795268B2
公开(公告)日：2020-10-06
申请号：US15721064
申请日：2017-09-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yen-Liang Chen
Abstract: An overlay error measurement structure includes a lower-layer pattern disposed over a substrate, and an upper-layer pattern disposed over the lower-layer pattern and at least partially overlapping with the lower-layer pattern. The lower-layer pattern includes a plurality of first sub-patterns extending in a first direction and being arranged in a second direction crossing the first direction. The upper-layer pattern includes a plurality of second sub-patterns extending in the first direction and being arranged in the second direction. At least one of a pattern pitch and a pattern width of at least one of at least a part of the first sub-patterns and at least a part of the second sub-patterns varies along the second direction.
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Patent Agency Ranking
公开(公告)号：US10663633B2
公开(公告)日：2020-05-26
申请号：US15637910
申请日：2017-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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公开(公告)号：US20180172514A1
公开(公告)日：2018-06-21
申请号：US15623665
申请日：2017-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kai Wu , Hung-Chih Hsieh , Kai-Hsiung Chen , Chih-Ming Ke , Yen-Liang Chen
CPC classification number: G01J3/28 , G01J3/2803 , G01J2003/2806 , G03F7/70616 , G03F7/70633 , G03F9/7065
Abstract: A spectroscopic overlay metrology system and corresponding spectroscopic overlay metrology methods are disclosed herein for improving overly measurement accuracy, optimizing overlay recipes, and/or minimizing (or eliminating) asymmetry-induced overly error from overlay measurements. An exemplary method includes generating a diffraction spectrum by an overlay target from incident radiation having more than one wavelength. The diffraction spectrum includes a plurality of positive ordered diffracted beams and a plurality of negative ordered diffracted beams that are separated by wavelength, such that the diffraction spectrum includes more than one wavelength of a positive order and a negative order. The method further includes collecting intensity information associated with the diffraction spectrum generated by the overlay target from the incident radiation, and generating overlay information from the collected intensity information, where the overlay information includes contributions from asymmetry-induced overlay error. In some implementations, the method includes optimizing an overlay recipe based on the generated overlay information.
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公开(公告)号：US10983005B2
公开(公告)日：2021-04-20
申请号：US15623665
申请日：2017-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kai Wu , Hung-Chih Hsieh , Kai-Hsiung Chen , Chih-Ming Ke , Yen-Liang Chen
Abstract: A spectroscopic overlay metrology system and corresponding spectroscopic overlay metrology methods are disclosed herein for improving overly measurement accuracy, optimizing overlay recipes, and/or minimizing (or eliminating) asymmetry-induced overly error from overlay measurements. An exemplary method includes generating a diffraction spectrum by an overlay target from incident radiation having more than one wavelength. The diffraction spectrum includes a plurality of positive ordered diffracted beams and a plurality of negative ordered diffracted beams that are separated by wavelength, such that the diffraction spectrum includes more than one wavelength of a positive order and a negative order. The method further includes collecting intensity information associated with the diffraction spectrum generated by the overlay target from the incident radiation, and generating overlay information from the collected intensity information, where the overlay information includes contributions from asymmetry-induced overlay error. In some implementations, the method includes optimizing an overlay recipe based on the generated overlay information.
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公开(公告)号：US10755405B2
公开(公告)日：2020-08-25
申请号：US15919428
申请日：2018-03-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Liang Chen , Jun-Xiu Liu
IPC: G06K9/00 , G06T7/00 , H01L21/66 , G01N21/956
Abstract: Methods and systems for diagnosing a semiconductor wafer are provided. A first raw image, a second raw image, and a third raw image of the semiconductor wafer are obtained by an inspection apparatus according to graphic data system (GDS) information regarding layout of a target die. A first image-based comparison is performed by a determining circuitry on the first, second, and third raw images, so as to provide a comparison result. The comparison result indicates whether an image difference is present between the first, second, and third raw images.
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公开(公告)号：US20190004220A1
公开(公告)日：2019-01-03
申请号：US15637910
申请日：2017-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
CPC classification number: G02B5/1866 , G02B5/18 , G02B5/1861 , G02F1/31 , G03F1/44 , G03F7/2024 , G03F7/70616 , G03F7/70633 , G03H1/26
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
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