公开(公告)号：US20240055371A1

公开(公告)日：2024-02-15

申请号：US18151556

申请日：2023-01-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Der-Chyang Yeh ,  Kuo-Chiang Ting ,  Yu-Hsiung Wang ,  Chao-Wen Shih ,  Sung-Feng Yeh ,  Ta Hao Sung ,  Cheng-Wei Huang ,  Yen-Ping Wang ,  Chang-Wen Huang ,  Sheng-Ta Lin ,  Li-Cheng Hu ,  Gao-Long Wu

IPC: H01L23/00 ,  H01L23/58 ,  H01L23/48 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L23/481 ,  H01L23/3178 ,  H01L21/565

Abstract: Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.