公开(公告)号：US10942459B2

公开(公告)日：2021-03-09

申请号：US16805857

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Ta Lin ,  Li-Jui Chen ,  Shang-Chieh Chien

IPC: G03F7/20

Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.

公开(公告)号：US10512147B1

公开(公告)日：2019-12-17

申请号：US16240951

申请日：2019-01-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Ssu-Yu Chen ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/20 ,  G03F1/24

Abstract: An extreme ultraviolet radiation source is provided, including a droplet generator and a droplet catcher. The droplet generator is configured to output a plurality of target droplets along a target droplet path that is parallel to a horizontal direction. The droplet catcher includes an open end substantially aligned with the target droplet path, and an enclosed end that is opposite to the open end. The droplet catcher also includes a pipe wall disposed between the open end the enclosed end. The pipe wall includes a first pipe wall portion having an inner top surface parallel to the horizontal direction and an inner bottom surface inclined relative to the inner top surface. In addition, the droplet catcher includes at least one gutter formed on the inner bottom surface and having a long axis extending along the horizontal direction.

公开(公告)号：US11071191B2

公开(公告)日：2021-07-20

申请号：US16899825

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  B08B5/02 ,  B01D46/10 ,  G03F7/20 ,  H01L21/027

Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.

公开(公告)号：US20240055371A1

公开(公告)日：2024-02-15

申请号：US18151556

申请日：2023-01-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Der-Chyang Yeh ,  Kuo-Chiang Ting ,  Yu-Hsiung Wang ,  Chao-Wen Shih ,  Sung-Feng Yeh ,  Ta Hao Sung ,  Cheng-Wei Huang ,  Yen-Ping Wang ,  Chang-Wen Huang ,  Sheng-Ta Lin ,  Li-Cheng Hu ,  Gao-Long Wu

IPC: H01L23/00 ,  H01L23/58 ,  H01L23/48 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L23/481 ,  H01L23/3178 ,  H01L21/565

Abstract: Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.

公开(公告)号：US10990026B2

公开(公告)日：2021-04-27

申请号：US16181111

申请日：2018-11-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20

Abstract: A method for cleaning a lithography apparatus is provided. The method includes flowing a major cleaning agent in volume over a reflective surface of a collector of the lithography apparatus; and flowing a minor cleaning agent in volume intermittently over the reflective surface of the collector, so as to clean the reflective surface of the collector.

公开(公告)号：US20210033990A1

公开(公告)日：2021-02-04

申请号：US16805857

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Ta Lin ,  Li-Jui Chen ,  Shang-Chieh Chien

IPC: G03F7/20

Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.

公开(公告)号：US20200057393A1

公开(公告)日：2020-02-20

申请号：US16181111

申请日：2018-11-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20

Abstract: A method for cleaning a lithography apparatus is provided. The method includes flowing a major cleaning agent in volume over a reflective surface of a collector of the lithography apparatus; and flowing a minor cleaning agent in volume intermittently over the reflective surface of the collector, so as to clean the reflective surface of the collector.

公开(公告)号：US10687410B2

公开(公告)日：2020-06-16

申请号：US16250026

申请日：2019-01-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  B08B5/02 ,  B01D46/10 ,  G03F7/20 ,  H01L21/027

Abstract: An extreme ultraviolet radiation source is provided, including a vessel, an optical collector, and a gas scrubber. The vessel has a gas inlet and a gas outlet. The optical collector is disposed within the vessel and configured to collect and reflect extreme ultraviolet light produced in the vessel. A cleaning gas is introduced into the vessel through the gas inlet to clean the surface of the optical collector. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the size of the gas passage close to the gas outlet is smaller than the size of the gas passage away from the gas outlet.