公开(公告)号：US5894295A

公开(公告)日：1999-04-13

申请号：US570964

申请日：1995-12-12

申请人： Takayuki Shimada ,  Atsushi Ban ,  Masaya Okamoto

发明人： Takayuki Shimada ,  Atsushi Ban ,  Masaya Okamoto

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/36 ,  G11C29/00 ,  G09G3/18

CPC分类号： G11C29/78 ,  G09G2330/08 ,  G09G3/3688

摘要： A plurality of source signal lines which supplies display data of picture elements, which are sampled at a sampling gate, from a video signal line to a plurality of picture element TFTs arranged in a matrix pattern, and a plurality of gate signal lines that supplies a control signal for controlling the picture element TFTs and that intersect the source signal lines are provided to a display section. A spare wiring is formed on each source signal line or gate signal line so that the spare wiring intersects only a non-input end of each source signal line or of each gate signal line. A corrective signal supplying circuit for supplying a corrective signal of display data or a corrective signal of the control signal for controlling picture element TFTs is provided to the outside of the display section. As a result, a line breakdown can be completely corrected.

摘要翻译： 多个源信号线，其将从采样门采样的图像元素的显示数据从视频信号线提供给以矩阵图案排列的多个像素TFT;以及多个栅极信号线， 用于控制像素TFT并且与源极信号线相交的控制信号被提供给显示部分。 在每个源极信号线或栅极信号线上形成备用布线，使得备用配线仅与每个源极信号线或每个栅极信号线的非输入端相交。 用于提供显示数据的校正信号的校正信号提供电路或用于控制像素TFT的控制信号的校正信号被提供给显示部分的外部。 结果，线路故障可以被完全校正。

公开(公告)号：US20090026457A1

公开(公告)日：2009-01-29

申请号：US12283893

申请日：2008-09-16

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US08304297B2

公开(公告)日：2012-11-06

申请号：US12807215

申请日：2010-08-31

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L21/82

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜，与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US07829391B2

公开(公告)日：2010-11-09

申请号：US12658555

申请日：2010-02-11

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L21/82

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜，与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US06797982B2

公开(公告)日：2004-09-28

申请号：US09939479

申请日：2001-08-24

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L2904

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜，与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US06284576B1

公开(公告)日：2001-09-04

申请号：US09196229

申请日：1998-11-20

申请人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

发明人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

IPC分类号： H01L2100

CPC分类号： H01L29/66765

摘要： A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by a dry etching with etching gases including HCl+SF6 or CF4+O2+HCl by the use of the source electrode and drain electrode as direct masks. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

摘要翻译： 反向交错型薄膜晶体管设置有栅电极，第一和第二栅极绝缘膜，半导体层，分离的接触层以及源极和漏极，所有这些都堆叠在基板上。 在制造这种类型的薄膜晶体管时，在单个接触材料层中将间隙部分图案化。 在这种情况下，通过使用源电极和漏电极作为直接掩模的蚀刻气体，包括HCl + SF6或CF4 + O2 + HCl的干法蚀刻来对接触材料层进行构图。 在图案化源电极和漏电极之间的接触材料层中的间隙部分时，不需要专用抗蚀剂图案; 因此，与传统的制造方法相比，可以减少处理次数。 因此，可以降低薄膜晶体管的生产成本，并且还可以提高所需产品的产量。

公开(公告)号：US20110003417A1

公开(公告)日：2011-01-06

申请号：US12807215

申请日：2010-08-31

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L21/336 ,  H01L33/02

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线与绝缘膜相交，跨越所有栅极线。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US20100167443A1

公开(公告)日：2010-07-01

申请号：US12658555

申请日：2010-02-11

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L33/00

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US07696516B2

公开(公告)日：2010-04-13

申请号：US12283893

申请日：2008-09-16

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US07459723B2

公开(公告)日：2008-12-02

申请号：US11450810

申请日：2006-06-08

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜，与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。