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    Single crystal heat treatment method
    3.
    发明申请
    Single crystal heat treatment method 有权
    单晶热处理方法

    公开(公告)号：US20060266277A1

    公开(公告)日：2006-11-30

    申请号：US11374436

    申请日：2006-03-14

    申请人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

    发明人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B30/04 ,  C30B28/10

    CPC分类号： C30B31/08 ,  C30B29/34

    摘要： A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≦T1

    摘要翻译： 一种单晶热处理方法，其特征在于，在不饱和的氧气氛中，在温度T 1℃（单位：℃）下加热特定的铈掺杂的硅酸盐化合物的单晶， 由式（3）表示的条件<？in-line-formula description =“In-line Formulas”end =“lead”？> 800 <= T <1 <（T < （3）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中T m1（单位：°C））表示 单晶的熔点）。

    Single crystal heat treatment method
    4.
    发明授权
    Single crystal heat treatment method 有权

    公开(公告)号：US07531036B2

    公开(公告)日：2009-05-12

    申请号：US11374435

    申请日：2006-03-14

    申请人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    发明人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    IPC分类号： C30B15/14 ,  C30B21/06

    CPC分类号： C30B29/34 ,  C30B31/08 ,  Y10S117/906

    摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2−(x+y)LnxCeySiO5  (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(z+w)LnzCewSiO5  (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5  (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(r+s)LurCesSiO5  (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).

    Single crystal heat treatment method
    6.
    发明申请
    Single crystal heat treatment method 有权

    公开(公告)号：US20060266276A1

    公开(公告)日：2006-11-30

    申请号：US11374435

    申请日：2006-03-14

    申请人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    发明人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    IPC分类号： C30B15/00 ,  C30B27/02 ,  C30B21/06 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B29/34 ,  C30B31/08 ,  Y10S117/906

    摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2-(x+y)LnxCeySiO5  (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(z+w)LnzCewSiO5  (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5  (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(r+s)LurCesSiO5  (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).