公开(公告)号：US20140291318A1

公开(公告)日：2014-10-02

申请号：US14219981

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA ,  Junichi KITAGAWA ,  Nobuhiko YAMAMOTO ,  Hiroyuki HAYASHI ,  Sumi TANAKA

IPC: H05B6/64

CPC classification number: H05B6/642 ,  H05B6/645 ,  H05B6/80

Abstract: A microwave heating apparatus is provided to perform heat treatment on a substrate to be processed by irradiating a microwave to the substrate in a processing chamber. The microwave heating apparatus includes a supporting table configured to support the substrate in the processing chamber, a microwave introducing unit configured to introduce the microwave into the processing chamber, a coolant channel formed in the supporting table, and a coolant supply source configured to supply a coolant to the coolant channel. At least a surface of the supporting table which supports the substrate is made of a material in which a product of a relative dielectric constant and a dielectric loss angle is smaller than 0.005, and the coolant supplied from the coolant supply source is liquid having no electrical polarity.

Abstract translation: 提供一种微波加热装置，用于通过在处理室中向基板照射微波，对要加工的基板进行热处理。 微波加热装置包括：支撑台，其被构造成在处理室中支撑基板;微波引入单元，被配置为将微波引入处理室;形成在支撑台中的冷却剂通道;以及冷却剂供给源， 冷却剂到冷却剂通道。 支撑基板的支撑台的至少一个表面由相对介电常数和介电损耗角的乘积小于0.005的材料制成，并且从冷却剂供应源供应的冷却剂是不具有电的液体 极性。

公开(公告)号：US20140283734A1

公开(公告)日：2014-09-25

申请号：US14223547

申请日：2014-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Junichi KITAGAWA ,  Seokhyoung HONG ,  Yoshiro KABE

IPC: C30B1/02 ,  C30B30/00

CPC classification number: C30B1/023 ,  C30B29/06 ,  C30B30/00

Abstract: The present disclosure relates to a heat treatment method of performing a single crystallization of amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave. The heat treatment method includes: irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature.

Abstract translation: 本公开内容涉及通过用微波照射基板来在待处理的基板上进行单晶结晶化的热处理方法。 热处理方法包括：用微波照射基板以将基板的温度升高到第一温度，使得形成在基板上的非晶硅在基板和非晶硅之间的界面处成为单晶，并且成核确定 不在界面以外的区域发生; 用微波照射基板，在第一温度下加热基板一段预定时间; 用微波照射基板以将第一温度升高到高于第一温度的第二温度; 以及在所述第二温度下用所述微波照射所述基板以加热所述基板。