公开(公告)号：US20210225612A1

公开(公告)日：2021-07-22

申请号：US17144647

申请日：2021-01-08

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Taro IKEDA ,  Mikio SATO ,  Nobuhiko YAMAMOTO

IPC: H01J37/32 ,  H05H1/46

Abstract: An array antenna radiates an electromagnetic wave into a chamber of a plasma processing apparatus. The array antenna includes antennas and coupling prevention elements arranged at intervals between the antennas. Each of the coupling prevention elements includes a first member connected to a ceiling wall which is a ground surface in the chamber and a second member connected to a tip end of the first member or a vicinity of the tip end of the first member.

公开(公告)号：US20140117009A1

公开(公告)日：2014-05-01

申请号：US14043779

申请日：2013-10-01

Applicant: Tokyo Electron Limited

Inventor： Nobuhiko YAMAMOTO

IPC: H05B6/64

CPC classification number: H05B6/6491 ,  H05B6/806

Abstract: A microwave heating apparatus includes, a processing chamber, a microwave introducing unit, a support member and a heat assist member. The processing chamber is configured to accommodate an object to be processed, the processing chamber having a top wall, a bottom wall and a sidewall. The microwave introducing unit is configured to generate a microwave for heating the object and introduce the microwave into the processing chamber. The support member is configured to support the object by contact with the object in the processing chamber. The heating assist member is configured to generate heat by absorbing the microwave and assist heating of the object by radiant heat, the heating assist member disposed to be separated from the object by the support member.

Abstract translation: 微波加热装置包括处理室，微波引入单元，支撑构件和热辅助构件。 处理室被配置为容纳待处理的物体，处理室具有顶壁，底壁和侧壁。 微波引入单元被配置为产生用于加热物体的微波并将微波引入处理室。 支撑构件被构造成通过与处理室中的物体接触来支撑物体。 加热辅助构件被配置为通过吸收微波并且通过辐射热来辅助物体的加热来产生热量，加热辅助构件设置成通过支撑构件与物体分离。

公开(公告)号：US20220199369A1

公开(公告)日：2022-06-23

申请号：US17599912

申请日：2020-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA ,  Mikio SATO ,  Taro IKEDA ,  Nobuhiko YAMAMOTO

IPC: H01J37/32

Abstract: There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

公开(公告)号：US20140291318A1

公开(公告)日：2014-10-02

申请号：US14219981

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA ,  Junichi KITAGAWA ,  Nobuhiko YAMAMOTO ,  Hiroyuki HAYASHI ,  Sumi TANAKA

IPC: H05B6/64

CPC classification number: H05B6/642 ,  H05B6/645 ,  H05B6/80

Abstract: A microwave heating apparatus is provided to perform heat treatment on a substrate to be processed by irradiating a microwave to the substrate in a processing chamber. The microwave heating apparatus includes a supporting table configured to support the substrate in the processing chamber, a microwave introducing unit configured to introduce the microwave into the processing chamber, a coolant channel formed in the supporting table, and a coolant supply source configured to supply a coolant to the coolant channel. At least a surface of the supporting table which supports the substrate is made of a material in which a product of a relative dielectric constant and a dielectric loss angle is smaller than 0.005, and the coolant supplied from the coolant supply source is liquid having no electrical polarity.

Abstract translation: 提供一种微波加热装置，用于通过在处理室中向基板照射微波，对要加工的基板进行热处理。 微波加热装置包括：支撑台，其被构造成在处理室中支撑基板;微波引入单元，被配置为将微波引入处理室;形成在支撑台中的冷却剂通道;以及冷却剂供给源， 冷却剂到冷却剂通道。 支撑基板的支撑台的至少一个表面由相对介电常数和介电损耗角的乘积小于0.005的材料制成，并且从冷却剂供应源供应的冷却剂是不具有电的液体 极性。

公开(公告)号：US20140034636A1

公开(公告)日：2014-02-06

申请号：US13948436

申请日：2013-07-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiko YAMAMOTO ,  Junichi Kitagawa ,  Sumi Tanaka ,  Yuki Osada

IPC: H05B6/64

CPC classification number: H05B6/6402 ,  H05B6/6491 ,  H05B6/806

Abstract: A microwave irradiation apparatus, for performing a predetermined process by irradiating a microwave to a target substrate, includes a processing chamber configured to accommodate the target substrate, a support member configured to support the target substrate in the processing chamber, and a microwave introduction mechanism configured to generate microwaves and introduce the microwaves into the processing chamber. The microwave irradiation apparatus further includes microwave introduction ports through which the microwave generated by the microwave introducing mechanism is introduced into the processing chamber, electric field sensors configured to measure an electric field formed by the microwave introduced into the processing chamber, and a control unit configured to control powers of the microwaves introduced into the processing chamber through the microwave introduction ports from the microwave introduction mechanism based on the electric field measured by the electric field sensors.

Abstract translation: 一种用于通过向目标基板照射微波来执行预定处理的微波照射装置包括：被配置为容纳目标基板的处理室，被配置为在处理室中支撑目标基板的支撑部件和配置在所述处理室中的微波引入机构 产生微波并将微波引入处理室。 微波辐射装置还包括微波引入端口，微波引入机构产生的微波通过该微波引入端口被引入到处理室中，电场传感器被配置为测量由引入到处理室中的微波形成的电场;以及控制单元， 基于由电场传感器测量的电场，通过微波引入口从微波引入机构控制引入处理室的微波的功率。

公开(公告)号：US20240404805A1

公开(公告)日：2024-12-05

申请号：US18690810

申请日：2022-09-05

Applicant: Tokyo Electron Limited

Inventor： Mikio SATO ,  Eiki KAMATA ,  Taro IKEDA ,  Nobuhiko YAMAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a control device and configured to plasmarize a gas supplied to an interior of a processing container to perform a plasma processing on an object to be processed, wherein the control device includes: a measurer configured to measure an electron energy distribution function of plasma in the interior of the processing container, and a parameter changer configured to change parameters relating to the plasma processing so that the electron energy distribution function measured by the measurer during the plasma processing approaches a target electron energy distribution function.

公开(公告)号：US20210134560A1

公开(公告)日：2021-05-06

申请号：US17083709

申请日：2020-10-29

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Taro IKEDA ,  Mikio SATO ,  Nobuhiko YAMAMOTO

IPC: H01J37/32 ,  H05H1/46

Abstract: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

公开(公告)号：US20210082727A1

公开(公告)日：2021-03-18

申请号：US17018532

申请日：2020-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Atsushi KUBO ,  Eiki KAMATA ,  Nobuhiko YAMAMOTO

IPC: H01L21/67 ,  H01L21/66 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

公开(公告)号：US20160284516A1

公开(公告)日：2016-09-29

申请号：US15075670

申请日：2016-03-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Akira TANIHARA ,  Shigeru KASAI ,  Nobuhiko YAMAMOTO

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32238

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Abstract translation: 一种微波等离子体源，用于通过将微波辐射到等离子体处理装置的腔室中来形成表面波等离子体，其包括：用于输出微波的微波输出部分; 用于传送微波的微波传输部分; 以及用于将微波辐射到室中的微波辐射构件。 微波传输部分包括多个微波引入机构，其周向布置在微波辐射部件的周边部分中，并被配置为将微波引入到微波辐射部件中。 微波辐射构件包括金属主体，在主体的配置表面附近布置成整体环形的多个电介质慢波构件，布置在主体的微波辐射表面中的环形介电微波传输构件 主体和安装在慢波构件和微波传输构件之间的缝隙天线部分。