公开(公告)号：US20140291318A1

公开(公告)日：2014-10-02

申请号：US14219981

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA ,  Junichi KITAGAWA ,  Nobuhiko YAMAMOTO ,  Hiroyuki HAYASHI ,  Sumi TANAKA

IPC: H05B6/64

CPC classification number: H05B6/642 ,  H05B6/645 ,  H05B6/80

Abstract: A microwave heating apparatus is provided to perform heat treatment on a substrate to be processed by irradiating a microwave to the substrate in a processing chamber. The microwave heating apparatus includes a supporting table configured to support the substrate in the processing chamber, a microwave introducing unit configured to introduce the microwave into the processing chamber, a coolant channel formed in the supporting table, and a coolant supply source configured to supply a coolant to the coolant channel. At least a surface of the supporting table which supports the substrate is made of a material in which a product of a relative dielectric constant and a dielectric loss angle is smaller than 0.005, and the coolant supplied from the coolant supply source is liquid having no electrical polarity.

Abstract translation: 提供一种微波加热装置，用于通过在处理室中向基板照射微波，对要加工的基板进行热处理。 微波加热装置包括：支撑台，其被构造成在处理室中支撑基板;微波引入单元，被配置为将微波引入处理室;形成在支撑台中的冷却剂通道;以及冷却剂供给源， 冷却剂到冷却剂通道。 支撑基板的支撑台的至少一个表面由相对介电常数和介电损耗角的乘积小于0.005的材料制成，并且从冷却剂供应源供应的冷却剂是不具有电的液体 极性。

公开(公告)号：US20140248784A1

公开(公告)日：2014-09-04

申请号：US14194318

申请日：2014-02-28

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki HAYASHI ,  Sumi TANAKA

IPC: H01L21/324 ,  H05B6/64 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H05B6/70 ,  H05B6/80 ,  H05B2206/044

Abstract: A microwave processing apparatus includes a processing chamber configured to accommodate an object to be processed, a support member configured to support the object by contact with the object in the processing chamber, and a microwave introducing unit configured to generate a microwave for processing the object and introduce the microwave into the processing chamber. The microwave processing apparatus further includes a heat absorbing layer provided on a wall surface of a member facing the object supported by the supporting member in the processing chamber. The heat absorbing layer is made of a material that transmits the microwave and has an emissivity higher than an emissivity of the member facing the object.

Abstract translation: 一种微波处理装置，包括：被配置为容纳被处理物的处理室，被配置为通过与处理室中的物体接触来支撑物体的支撑构件;以及微波引入单元，其被配置为产生用于处理所述物体的微波， 将微波引入处理室。 微波处理装置还包括设置在面对由处理室中的支撑构件支撑的物体的构件的壁面上的吸热层。 吸热层由透射微波并且具有高于面向物体的构件的发射率的发射率的材料制成。

公开(公告)号：US20220068603A1

公开(公告)日：2022-03-03

申请号：US17299483

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

Inventor： Taro IKEDA ,  Sumi TANAKA ,  Satoru KAWAKAMI ,  Masaki HIRAYAMA

IPC: H01J37/32

Abstract: A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

公开(公告)号：US20210225618A1

公开(公告)日：2021-07-22

申请号：US17149246

申请日：2021-01-14

Applicant: Tokyo Electron Limited

Inventor： Sumi TANAKA ,  Tamihiro KOBAYASHI

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/458

Abstract: A substrate processing apparatus includes: a processing chamber including a processing room; a heating unit that heats the processing chamber; a support including a base thermally isolated from the processing chamber and fixed to the processing chamber, and a stage inserted into an opening provided toward the processing room while being supported by the base at a position distant from a reference position in a horizontal direction, and holds the substrate in the processing room; a stage peripheral member provided in the processing chamber along a periphery of the stage in a state of being inserted into the opening; and a first positioning pin fixed to the processing chamber to position the stage peripheral member, and a second positioning pin fixed to a position farther than the first positioning pin.

公开(公告)号：US20210071302A1

公开(公告)日：2021-03-11

申请号：US17005818

申请日：2020-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sumi TANAKA

IPC: C23C16/48 ,  C23C16/458 ,  C23C16/455 ,  C23C16/24

Abstract: A substrate processing apparatus for processing a substrate is provided. In the substrate processing apparatus, a substrate support has an upper surface on which a substrate is placed and serves to heat the substrate placed thereon. At least one substrate support pin is configured to protrude from and retract below the upper surface of the substrate support and to support the substrate. Further, a light irradiation mechanism is configured to irradiate light to a specific portion of the substrate placed on the upper surface of the substrate support, corresponding to a position where the at least one substrate support pin protrudes and retracts, to heat the specific portion.

公开(公告)号：US20150136759A1

公开(公告)日：2015-05-21

申请号：US14541010

申请日：2014-11-13

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Sumi TANAKA

IPC: H05B6/70 ,  H01L21/67 ,  H05B6/64

CPC classification number: H01L21/67115 ,  H05B6/6411 ,  H05B6/70 ,  H05B6/701 ,  H05B6/705 ,  H05B6/806

Abstract: A microwave heating apparatus includes a processing chamber configured to accommodate a substrate; a substrate holding unit configured to hold and rotate the substrate in the processing chamber; a microwave generating source configured to generate a microwave; and a plurality of microwave inlet ports formed at a surface of the processing chamber which faces the substrate in the processing chamber, each of the microwave inlet ports having an opening area that gradually becomes wider toward the substrate. The microwave generated by the microwave generating source is irradiated to the substrate in the processing chamber through the microwave inlet ports to heat the substrate.

Abstract translation: 微波加热装置包括：配置成容纳基板的处理室; 衬底保持单元，被配置为在所述处理室中保持和旋转所述衬底; 构造成产生微波的微波发生源; 以及多个微波入口，形成在处理室的与处理室中的基板相对的表面处，每个微波入口具有朝向基板逐渐变宽的开口面积。 由微波发生源生成的微波通过微波入口照射到处理室中的基板，以加热基板。

公开(公告)号：US20210265138A1

公开(公告)日：2021-08-26

申请号：US17175782

申请日：2021-02-15

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Satoru KAWAKAMI ,  Sumi TANAKA

IPC: H01J37/32

Abstract: A stage includes a stage body having a placement surface and a radio-frequency electrode embedded in the stage body. The stage body is made of ceramics, and the radio-frequency electrode extends in a thickness direction of the stage body in a region below an outer periphery of the placement surface.

公开(公告)号：US20130168389A1

公开(公告)日：2013-07-04

申请号：US13726963

申请日：2012-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Sumi TANAKA

IPC: H05B6/64

CPC classification number: H05B6/6402 ,  H05B6/70 ,  H05B6/806

Abstract: Four microwave introduction ports are arranged to deviate from directly above a wafer in such a way that the long sides thereof are in parallel to at least one of the four straight sides. The top surface of a rectifying plate which surrounds the wafer is inclined so as to be widened from the side of the wafer (inner side) toward the side of a sidewall portion (outer side) to form an inclined portion. The inclined portion is disposed to face the four microwave introduction ports in a vertical direction.

Abstract translation: 四个微波引入端口被布置成以使其长边平行于四个直边中的至少一个的方式偏离晶片的正上方。 围绕晶片的整流板的顶面倾斜，从晶片侧（内侧）向侧壁部侧（外侧）的侧面变宽，形成倾斜部。 倾斜部分设置为在垂直方向上面对四个微波导入口。