公开(公告)号：US20230399737A1

公开(公告)日：2023-12-14

申请号：US18032264

申请日：2021-10-08

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro KATO ,  Junya SUZUKI ,  Toshio HASEGAWA ,  Kouji SHIMOMURA

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/36 ,  C23C16/455

CPC classification number: C23C16/045 ,  H01J37/32449 ,  H01J37/32174 ,  H01L21/0214 ,  H01L21/02274 ,  H01L21/0228 ,  C23C16/505 ,  C23C16/36 ,  C23C16/45536 ,  H01J2237/332

Abstract: A film forming method according to an aspect of the present disclosure is a film forming method of embedding a film in a recess formed in a surface of a substrate, and includes a first processing including (a) adsorbing a raw material gas into the recess, (b) forming a film by reacting a reaction gas with the raw material gas, and (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the gas into the recess to shrink the film. A plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).

公开(公告)号：US20150206778A1

公开(公告)日：2015-07-23

申请号：US14591214

申请日：2015-01-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kouji SHIMOMURA

IPC: H01L21/67 ,  H05B6/64 ,  H01L21/324 ,  H05B6/70

CPC classification number: H01L21/67115 ,  B01J19/006 ,  B01J19/126 ,  B01J19/1887 ,  B01J2219/1242 ,  B01J2219/1281 ,  B01J2219/1296 ,  H01L21/324 ,  H05B6/6411 ,  H05B6/705 ,  H05B6/708 ,  H05B6/806 ,  H05B2206/044

Abstract: A microwave processing apparatus for processing a substrate by irradiating a microwave to the substrate includes: a processing container configured to accommodate a substrate; and a microwave introducing device configured to have a microwave source that generates a microwave and introduce the microwave into a microwave radiation space within the processing container. The microwave introducing device includes: a waveguide configured to form a transmission path to guide the microwave into the processing container; a first microwave transmission window interposed between the transmission path and the microwave radiation space; and a second microwave transmission window installed to be closer to the microwave source than the first microwave transmission window, and configured to change a traveling direction of the microwave.

Abstract translation: 一种通过向基板照射微波来处理基板的微波处理装置包括：处理容器，其构造成容纳基板; 以及微波引入装置，其被配置为具有产生微波的微波源并将微波引入到处理容器内的微波辐射空间中。 微波引入装置包括：波导，其被配置为形成将微波引导到处理容器中的传输路径; 介于所述传输路径和所述微波辐射空间之间的第一微波传输窗口; 以及安装成比第一微波透射窗更靠近微波源的第二微波透射窗，并且被配置为改变微波的行进方向。

公开(公告)号：US20150201469A1

公开(公告)日：2015-07-16

申请号：US14598063

申请日：2015-01-15

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA

IPC: H05B6/64 ,  G01K11/20

CPC classification number: H05B6/645 ,  G01K11/20 ,  H05B6/6411 ,  H05B6/80

Abstract: A heating apparatus includes a heat source; a holder having a contact portion configured to support an object to be processed; a rotation driving unit configured to rotate the holder; a luminous body including a fluorescent material or a phosphorescent material provided in the contact portion; and a fluorescent thermometer configured to measure a temperature of the object based on light from the luminous body. The fluorescent thermometer includes: a light source which is separated from the holder and configured to generate excitation light for exciting the luminous body; light receivers separated from the holder, each of the light receivers having a photodetector configured to receive the light from the luminous body; and a processing unit configured to calculate the temperature based on intensity of the light received by the photodetector of each of the light receivers.

Abstract translation: 加热装置包括热源; 具有被配置为支撑待处理物体的接触部分的保持器; 旋转驱动单元，其构造成使所述保持器旋转; 包括设置在所述接触部分中的荧光材料或磷光材料的发光体; 以及荧光温度计，被配置为基于来自发光体的光来测量物体的温度。 荧光温度计包括：光源，其与保持器分离并且被配置为产生用于激发发光体的激发光; 光接收器与保持器分离，每个光接收器具有被配置为接收来自发光体的光的光电检测器; 以及处理单元，被配置为基于由每个光接收器的光电检测器接收的光的强度来计算温度。

公开(公告)号：US20230357923A1

公开(公告)日：2023-11-09

申请号：US18043766

申请日：2021-08-30

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA ,  Yoshihiro KATO ,  Toshio HASEGAWA ,  Junya SUZUKI

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

CPC classification number: C23C16/403 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0234 ,  H01L21/02178 ,  H01L21/0228

Abstract: A film forming method of forming a metal-containing aluminum oxide layer on a substrate having at least a metal layer on a surface thereof includes: a first operation of forming an aluminum oxide layer on the substrate with an aluminum-containing precursor and an oxidant; and a second operation of forming a metal oxide layer on the substrate with the oxidant and a precursor including a first metal other than aluminum. Assuming that a dielectric constant of only an oxide of the first metal is ε1 and a molar ratio of the first metal to all metals in the metal-containing aluminum oxide layer is X, the formed metal-containing aluminum oxide layer satisfies a following condition (1) or (2): X>⅓ and ε1

公开(公告)号：US20220068637A1

公开(公告)日：2022-03-03

申请号：US17310258

申请日：2019-10-28

Applicant: Tokyo Electron Limited

Inventor： Kotaro MIYATANI ,  Naotaka NORO ,  Kouji SHIMOMURA ,  Ryoun SHIMAMOTO ,  Toshiyuki IKEUCHI ,  Younggi HONG

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

Abstract: A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.

公开(公告)号：US20140041682A1

公开(公告)日：2014-02-13

申请号：US13960037

申请日：2013-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Yoshiro KABE ,  Kouji SHIMOMURA

IPC: B08B7/00

CPC classification number: B08B7/0035 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32862

Abstract: A method for cleaning a microwave processing apparatus including a processing chamber for accommodating therein an object to be processed, a microwave introducing unit for introducing microwaves into the chamber, and a gas introducing unit for introducing a gas into the processing chamber is provided. The method includes loading an object for cleaning into the processing chamber, introducing a gas into the processing chamber, introducing microwaves into the processing chamber, and unloading the object from the processing chamber.

Abstract translation: 一种微波处理装置的清洗方法，其特征在于，包括：处理室，其容纳有被处理物的微波处理装置，将微波导入所述室的微波导入部，以及将气体导入所述处理室的气体导入部。 该方法包括将清洁物体装载到处理室中，将气体引入处理室，将微波引入处理室，以及从处理室卸载物体。

公开(公告)号：US20150129586A1

公开(公告)日：2015-05-14

申请号：US14603910

申请日：2015-01-23

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Jun YAMASHITA ,  Seokhyoung HONG ,  Kouji SHIMOMURA ,  Hiroyuki HAYASHI

IPC: H05B6/80 ,  H01L21/324

CPC classification number: H05B6/806 ,  H01L21/324

Abstract: A microwave heating apparatus includes a processing chamber having a top wall, a bottom wall and a sidewall, and configured to accommodate an object to be processed; a microwave introducing unit configured to generate a microwave for heating the object and introduce the microwave into the processing chamber; a plurality of supporting members configured to make contact with the object and support the object in the processing chamber. The microwave heating apparatus further includes a dielectric member provided between the object supported by the supporting members and the bottom wall while being apart from the object.

Abstract translation: 微波加热装置包括具有顶壁，底壁和侧壁的处理室，并且被配置为容纳被处理物体; 微波引入单元，被配置为产生用于加热所述物体并将所述微波引入所述处理室的微波; 多个支撑构件，其构造成与所述物体接触并将所述物体支撑在所述处理室中。 微波加热装置还包括设置在由支撑构件支撑的物体和与该物体分离的底壁之间的电介质构件。

公开(公告)号：US20140367377A1

公开(公告)日：2014-12-18

申请号：US14293794

申请日：2014-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Kouji SHIMOMURA ,  Seokhyoung HONG ,  Yoshihiro MIYAGAWA ,  Jun YAMASHITA ,  Taro IKEDA ,  Yuki MOTOMURA

IPC: H05B6/74 ,  H05B6/80 ,  H05B6/64

CPC classification number: H05B6/74 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792 ,  H05B6/705 ,  H05B6/806 ,  H05B2206/044

Abstract: A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.

Abstract translation: 微波加热装置包括：相位控制单元，被配置为通过微波引入单元改变引入到处理室的微波驻波的相位。 相位控制单元包括相对于底壁的内表面的凹部。 相位控制单元由从处理室的外侧安装在底部的下表面的底部和固定板形成。 处理室中的驻波的相位由金属壁包围的相位控制单元的凹部中的微波的入射和反射而改变。

公开(公告)号：US20140291318A1

公开(公告)日：2014-10-02

申请号：US14219981

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA ,  Junichi KITAGAWA ,  Nobuhiko YAMAMOTO ,  Hiroyuki HAYASHI ,  Sumi TANAKA

IPC: H05B6/64

CPC classification number: H05B6/642 ,  H05B6/645 ,  H05B6/80

Abstract: A microwave heating apparatus is provided to perform heat treatment on a substrate to be processed by irradiating a microwave to the substrate in a processing chamber. The microwave heating apparatus includes a supporting table configured to support the substrate in the processing chamber, a microwave introducing unit configured to introduce the microwave into the processing chamber, a coolant channel formed in the supporting table, and a coolant supply source configured to supply a coolant to the coolant channel. At least a surface of the supporting table which supports the substrate is made of a material in which a product of a relative dielectric constant and a dielectric loss angle is smaller than 0.005, and the coolant supplied from the coolant supply source is liquid having no electrical polarity.

Abstract translation: 提供一种微波加热装置，用于通过在处理室中向基板照射微波，对要加工的基板进行热处理。 微波加热装置包括：支撑台，其被构造成在处理室中支撑基板;微波引入单元，被配置为将微波引入处理室;形成在支撑台中的冷却剂通道;以及冷却剂供给源， 冷却剂到冷却剂通道。 支撑基板的支撑台的至少一个表面由相对介电常数和介电损耗角的乘积小于0.005的材料制成，并且从冷却剂供应源供应的冷却剂是不具有电的液体 极性。

公开(公告)号：US20140246424A1

公开(公告)日：2014-09-04

申请号：US14177393

申请日：2014-02-11

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA

IPC: H05B6/64

CPC classification number: H05B6/80 ,  H01L21/67115 ,  H05B6/70 ,  H05B2206/044

Abstract: Disclosed are a microwave heat treatment apparatus and a processing method in which a purging process time may be reduced while suppressing a use amount of a purging gas with simple facilities. An internal space of the processing container 2 of the microwave heat treatment apparatus 1 is at least divided, by a partition 7 and a processing container 2, into a first chamber S1 in which a wafer W is accommodated and a second chamber S2 into which the purging gas is directly introduced by the gas introducing unit 26. The purging gas is introduced from the gas introducing unit 26 into the second chamber S2 to diffuse the purging gas from the second chamber S2 into the first chamber S1 through a plurality of gas holes 7a of the partition 7 to purge atmosphere of the first chamber S1.

Abstract translation: 公开了一种微波热处理装置和处理方法，其中可以通过简单的设备抑制净化气体的使用量，从而可以减少净化处理时间。 微波热处理装置1的处理容器2的内部空间至少被隔板7和处理容器2分割成容纳晶片W的第一室S1和第二室S2， 吹扫气体由气体引入单元26直接引入。吹扫气体从气体引入单元26引入第二室S2中，以将净化气体从第二室S2扩散通过多个气孔7a扩散到第一室S1中 以清除第一室S1的气氛。