公开(公告)号：US20240014153A1

公开(公告)日：2024-01-11

申请号：US18257674

申请日：2021-12-13

Applicant: Tokyo Electron Limited

Inventor： Takashi FUJIBAYASHI ,  Kenji OUCHI

IPC: H01L23/00

CPC classification number: H01L24/03 ,  H01L24/08 ,  H01L24/05 ,  H01L24/83 ,  H01L2224/03616 ,  H01L2224/03452 ,  H01L2224/08501 ,  H01L2224/08237 ,  H01L2224/08147 ,  H01L2224/8009 ,  H01L2224/80143 ,  H01L2224/80048

Abstract: A substrate bonding system in one manner of the present disclosure includes a surface treatment module configured to perform plasma processing on a surface of a substrate. The substrate bonding system includes a deposition module coupled to the surface treatment module such that the substrate is transferred to the deposition module without being exposed to atmosphere, the deposition module being configured to perform a deposition process on the substrate on which the plasma processing is performed in the surface treatment module. The substrate bonding system includes a bonding module coupled to the deposition module such that the substrate is transferred to the bonding module without exposing the substrate to the atmosphere, the bonding module being configured to bond substrates on which the deposition process is performed in the deposition module, to form a bonded body.

公开(公告)号：US20180251891A1

公开(公告)日：2018-09-06

申请号：US15971173

申请日：2018-05-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi FUJIBAYASHI ,  Naoki YOSHII

IPC: C23C16/448 ,  C23C16/52

CPC classification number: C23C16/4481 ,  C23C16/448 ,  C23C16/52

Abstract: A vaporizer includes: a gas-liquid mixer for mixing a solution containing a precursor and a carrier gas; a nozzle for injecting the mixed solution; a vaporization chamber in which the injected solution is vaporized; a first temperature-adjustment-mechanism for adjusting a chamber temperature of the vaporization chamber; a second temperature-adjustment-mechanism for adjusting a mixing temperature of the gas-liquid mixer; a third temperature-adjustment-mechanism for adjusting a nozzle temperature of the nozzle; and a control device for controlling the first temperature-adjustment-mechanism to adjust the chamber temperature to a first temperature higher than a vaporization temperature of the precursor, for controlling the second temperature-adjustment-mechanism to adjust the mixing temperature to a second temperature lower than the first temperature, and for controlling the third temperature-adjustment-mechanism to adjust the nozzle temperature to a third temperature ranging from the first temperature to the second temperature and lower than a vaporization temperature of a solvent of the solution.