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    FILM FORMING METHOD AND FILM FORMING APPARATUS
    1.
    发明申请
    FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
    薄膜成型方法和薄膜成型装置

    公开(公告)号：US20150368802A1

    公开(公告)日：2015-12-24

    申请号：US14747001

    申请日：2015-06-23

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kazuki YAMADA ,  Masato MORISHIMA ,  Kenji OUCHI ,  Taiki KATOU

    IPC: C23C16/50 ,  C23C16/34 ,  C23C16/24 ,  C23C16/52 ,  C23C16/455

    CPC classification number: C23C16/345 ,  C23C16/36 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L51/5256

    Abstract: There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

    Abstract translation: 提供一种形成密封膜以密封形成在基板上的器件的方法，包括：提供包含含硅气体和含卤素元素的气体的混合气体或包含含硅气体和 含有具有比氮的电负性强的官能团作为第一混合气体的气体进入处理容器; 产生处理容器内的第一混合气体的等离子体; 以及使用由所述等离子体激活的所述第一混合气体形成第一密封膜以覆盖所述装置。

    ETCHING METHOD
    2.
    发明申请
    ETCHING METHOD 审中-公开

    公开(公告)号：US20180261476A1

    公开(公告)日：2018-09-13

    申请号：US15915782

    申请日：2018-03-08

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kenji OUCHI

    IPC: H01L21/67 ,  H01L21/3213 ,  H01L21/311

    CPC classification number: H01L21/67069 ,  C23C16/045 ,  C23C16/34 ,  H01J37/3211 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/6719 ,  H01L21/768

    Abstract: An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves. The method includes supplying a first gas into a processing chamber, and supplying a second gas and a high frequency power to generate a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. The etching target film is made of a material that is dry etched by using fluorine, and portions of the etching target film covering the surfaces of the grooves are selectively removed.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
    4.
    发明申请
    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM 有权

    公开(公告)号：US20220157616A1

    公开(公告)日：2022-05-19

    申请号：US17528196

    申请日：2021-11-17

    Applicant: Tokyo Electron Limited

    Inventor： Kae KUMAGAI ,  Ryutaro SUDA ,  Maju TOMURA ,  Kenji OUCHI ,  Hiroki MURAKAMI ,  Munehito KAGAYA ,  Shuichiro SAKAI

    IPC: H01L21/311 ,  H01J37/32

    Abstract: A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more.

    METHOD FOR PROCESSING WORKPIECE
    6.
    发明申请
    METHOD FOR PROCESSING WORKPIECE 审中-公开

    公开(公告)号：US20190189437A1

    公开(公告)日：2019-06-20

    申请号：US16310520

    申请日：2017-06-15

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kenji OUCHI ,  Masato MORISHIMA

    IPC: H01L21/02 ,  C23C16/50 ,  C23C16/30 ,  C23C16/56 ,  C23C16/455 ,  H01L21/311 ,  H01J37/32

    Abstract: In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a groove 62 formed on the main surface 61 of the wafer W. The method MT includes: step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; step S2 of starting supplying a first gas into the processing chamber 4; step S3 of starting supplying plasma generation high-frequency power into the processing chamber 4; and step S4 of starting intermittent supplying a second gas into the processing chamber 4 and starting supplying a third gas into the processing chamber 4 together, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.

    FILM FORMATION METHOD
    8.
    发明申请
    FILM FORMATION METHOD 有权

    公开(公告)号：US20220336205A1

    公开(公告)日：2022-10-20

    申请号：US17753490

    申请日：2020-08-24

    Applicant: Tokyo Electron Limited

    Inventor： Kenji OUCHI ,  Shuji AZUMO ,  Yumiko KAWANO ,  Shinichi IKE

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  C23C16/06

    Abstract: A film formation method for selectively forming a film on a substrate includes: a preparation step of preparing a substrate having a surface on which a first film and a second film are exposed; a first film forming step of supplying a compound for forming a self-assembled monolayer onto the substrate to form the self-assembled monolayer on the first film, the compound having a functional group including fluorine and carbon and suppressing formation of a third film; a second film forming step of forming the third film on the second film; and a first removal step of removing the third film formed in a vicinity of the self-assembled monolayer by irradiating the surface of the substrate with ions or active species, wherein the third film is a film which forms a volatile compound more easily than the first film by being bonded to fluorine and carbon in the self-assembled monolayer.

    METHOD FOR PROCESSING WORKPIECE
    9.
    发明申请
    METHOD FOR PROCESSING WORKPIECE 审中-公开

    公开(公告)号：US20190326124A1

    公开(公告)日：2019-10-24

    申请号：US16310459

    申请日：2017-06-15

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kenji OUCHI

    IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23F4/00 ,  C23C16/24 ,  C23C16/52

    Abstract: In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion 61, an insulating portion 62, and a main surface 6, and a surface 61a of the metal portion 61 and a surface 62a of the insulating portion 62 are exposed on the main surface 6 side, the method MT includes: a step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; a step S2 of starting supplying O2 gas into the processing chamber 4; and a step S3 of generating a plasma in the processing chamber 4 by the gas in the processing chamber 4 containing a SiF4 gas by supplying the SiF4 gas and plasma generation high-frequency power into the processing chamber 4, the plasma generated in the step S3 contains deposition species and etching species, and, in the plasma generated in the step S3, a proportion occupied by the etching species is greater than a proportion occupied by the deposition species.

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