公开(公告)号：US20250075322A1

公开(公告)日：2025-03-06

申请号：US18822332

申请日：2024-09-02

Applicant: Tokyo Electron Limited

Inventor： Takuya HIGUCHI ,  Kosuke TAKAHASHI ,  Yasuhiro ONODERA

IPC: C23C16/54 ,  C23C16/06

Abstract: A method of monitoring a liquid raw material in a gas supply device, including a raw material storage tank that stores the liquid raw material, a liquid level detector that detects a liquid level of the liquid raw material, a gas inlet provided in the raw material storage tank, a gas outlet provided in the raw material storage tank, and a raw material inlet provided in the raw material storage tank, includes calculating a remaining amount of the liquid raw material based on a usage amount of the raw material and a replenishment amount of the raw material, estimating a detection result of a virtual sensor from the calculated remaining amount of the liquid raw material, and monitoring the liquid raw material based on a detection result of the liquid level detector and the estimated detection result of the virtual sensor.

公开(公告)号：US20240412970A1

公开(公告)日：2024-12-12

申请号：US18697569

申请日：2022-10-04

Applicant: Tokyo Electron Limited

Inventor： Kiyotaka IMAI ,  Motoyuki SATO ,  Yoshihiro HIROTA ,  Takuya HIGUCHI

IPC: H01L21/02 ,  H10B43/20 ,  H10B43/35 ,  H10B43/40

Abstract: A manufacturing method for a semiconductor device including a first semiconductor element and a second semiconductor element, includes the steps of forming an insulating layer on a first substrate having a first elastic modulus higher than a second elastic modulus, forming a first semiconductor element having a first bonding surface on the insulating layer, forming a second semiconductor element having a second bonding surface on a second substrate having the second elastic modulus, bonding the first bonding surface and the second bonding surface to each other to form a laminate of the first semiconductor element and the second semiconductor element, and removing the first substrate from the laminate.

公开(公告)号：US20230175137A1

公开(公告)日：2023-06-08

申请号：US18073798

申请日：2022-12-02

Applicant: Tokyo Electron Limited

Inventor： Morihito INAGAKI ,  Takuya HIGUCHI ,  Hideomi HANE

IPC: C23C16/52 ,  C23C16/46 ,  C23C16/44 ,  C23C16/458 ,  C23C16/50

CPC classification number: C23C16/52 ,  C23C16/46 ,  C23C16/4405 ,  C23C16/4586 ,  C23C16/4584 ,  C23C16/50

Abstract: A heat treatment apparatus includes a control device. The control device includes a heat treatment control unit that controls a heat treatment performed on a processing target accommodated in a processing container, according to a process condition, a cleaning control unit that controls a cleaning process on deposits adhering to the processing container due to the heat treatment, a cumulative film thickness specification unit that specifies a value of a cumulative film thickness of the deposits adhering to the processing container, based on the process condition for the heat treatment, and a temperature correction unit that corrects a temperature of the heat treatment based on a temperature correction amount corresponding to the value of the cumulative film thickness and a frequency of the cleaning process.