公开(公告)号：US20140094027A1

公开(公告)日：2014-04-03

申请号：US14044119

申请日：2013-10-02

Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Shuji AZUMO ,  Yusaku KASHIWAGI ,  Yuichiro MOROZUMI ,  Yu WAMURA ,  Katsushige HARADA ,  Kosuke TAKAHASHI ,  Heiji WATANABE ,  Takayoshi SHIMURA ,  Takuji HOSOI

IPC: H01L29/40

CPC classification number: H01L29/401 ,  C23C16/303 ,  C23C16/308 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/044 ,  H01L21/049 ,  H01L21/28264 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract translation: 提供一种形成用于功率器件的MOSFET的栅极绝缘膜的方法。 在晶片W的SiC衬底上形成AlN膜，然后重复形成AlO膜并在AlO膜上形成AlN膜，从而形成具有层叠结构的AlON膜，其中AlO膜和 AlN膜交替层压。 对具有层叠结构的AlON膜进行热处理。

公开(公告)号：US20170114461A1

公开(公告)日：2017-04-27

申请号：US15296588

申请日：2016-10-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kiichi TAKAHASHI ,  Yuya SASAKI ,  Kosuke TAKAHASHI

IPC: C23C16/455

CPC classification number: C23C16/45563 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45578

Abstract: A substrate processing apparatus includes a first hole portion formed through a sidewall of the process chamber and horizontally extending outward and a second hole portion formed to be contiguous with the first hole portion and defining a supply channel for a process gas. The apparatus also includes a gas nozzle, a plurality of seal members and an annular spacer. A proximal end of the gas nozzle is inserted into the first hole portion. The plurality of seal members is spaced apart from each other between an outer circumferential surface of the gas nozzle and the first hole portion. The annular spacer is inserted into the first hole portion and is pressed against an annular surface of an opening periphery of the second hole portion by the gas nozzle in a state where the proximal end of the gas nozzle is engaged with the annular spacer.

公开(公告)号：US20160111278A1

公开(公告)日：2016-04-21

申请号：US14876967

申请日：2015-10-07

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Fumiaki HAYASE ,  Masahiko KAMINISHI ,  Yu SASAKI ,  Kosuke TAKAHASHI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  H01L21/687

CPC classification number: H01L21/02271 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45551 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of a turntable at predetermined intervals in a circumferential direction, the turntable being provided in a processing chamber. Next, the turntable on which the plurality of substrates is placed is rotated. Then, a fluid is supplied to the surface of the turntable while rotating the turntable. Here, the fluid is supplied to an area between the plurality of substrate holding areas in response to an operation of changing a flow rate of the fluid.

Abstract translation: 提供了基板处理方法。 在该方法中，将多个基板沿圆周方向以预定间隔设置在转盘表面上的多个基板保持区域上，转台设置在处理室中。 接下来，旋转放置有多个基板的转台。 然后，在旋转转盘的同时，向转台的表面供给流体。 这里，响应于改变流体的流量的操作，将流体供给到多个基板保持区域之间的区域。

公开(公告)号：US20210087684A1

公开(公告)日：2021-03-25

申请号：US17016590

申请日：2020-09-10

Applicant: Tokyo Electron Limited

Inventor： Yu SASAKI ,  Toshihiko JO ,  Hitoshi KATO ,  Kosuke TAKAHASHI

IPC: C23C16/455 ,  C23C16/458

Abstract: A deposition apparatus according to one aspect of the present disclosure includes a processing chamber and a rotary table provided in the processing chamber. Above the rotary table, a raw material gas supply section, auxiliary gas supply sections, and a gas exhaust section are provided. The raw material gas supply section extends in a radial direction of the rotary table. The auxiliary gas supply sections are provided on a downstream side of a rotational direction of the rotary table with respect to the raw material gas supply section, and are arranged in the radial direction of the rotary table. The gas exhaust section is provided on the downstream side of the rotational direction of the rotary table with respect to the auxiliary gas supply sections, and extends in the radial direction of the rotary table.

公开(公告)号：US20180258527A1

公开(公告)日：2018-09-13

申请号：US15914261

申请日：2018-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu SASAKI ,  Kosuke TAKAHASHI ,  Fumiaki HAYASE

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/405 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/46 ,  C23C16/52

Abstract: A film forming apparatus includes first and second processing gas supply parts for respectively supplying first and second processing gases to the substrate, and a separation region formed between first and second processing regions to separate an atmosphere of the first processing region to which the first processing gas is supplied and an atmosphere of the second processing region to which the second processing gas is supplied. The separation region includes: a separation region forming member including edge portions radially extending from a rotation center to a peripheral edge of a rotary table and for forming a narrow space between the edge portions and the rotary table, and a concave portion provided in a region sandwiched between adjacent edge portions and for forming a buffer space; and a separation gas supply part for supplying a separation gas into the buffer space.

公开(公告)号：US20160138158A1

公开(公告)日：2016-05-19

申请号：US14933123

申请日：2015-11-05

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Fumiaki HAYASE ,  Masahiko KAMINISHI ,  Kosuke TAKAHASHI ,  Hiroko SASAKI ,  Yu SASAKI

IPC: C23C16/455 ,  B05B1/20

CPC classification number: C23C16/45591 ,  B05B1/205 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45587 ,  H01J37/3244

Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

Abstract translation: 用于供应流体的喷嘴包括管状部件，其包括其内部的管状通道和沿管状通道的长度方向形成有多个流体排出孔的流体排出表面。 分隔板设置在管状通道中并沿着长度方向延伸，以便将管状通道分隔成包括流体排放表面的第一区域和不具有流体排放表面的第二区域。 分隔板具有数量少于多个流体排出孔在长度方向上的数量的分配孔。 流体引入通道与第二区域连通。

公开(公告)号：US20140179121A1

公开(公告)日：2014-06-26

申请号：US14108663

申请日：2013-12-17

Applicant: Tokyo Electron Limited

Inventor： Hiroaki IKEGAWA ,  Masahiko KAMINISHI ,  Kosuke TAKAHASHI ,  Masato KOAKUTSU ,  Jun OGAWA

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/68764 ,  H01L21/68771

Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Abstract translation: 一种使用包括转台安装基板的设备在基板上沉积薄膜的方法，设置有气体供应部分的转盘上表面上方的第一和第二处理区域，在第一和第二处理区域之间的分离气体供应部分和 分离区域，包括通过旋转转盘第一匝来沉积第一氧化物膜，同时供应第一反应气体，来自第二气体供应部分的氧化气体和分离气体; 在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，并且来自第二气体供应部分的氧化气体; 并且至少第二匝旋转以沉积第二氧化物膜，同时从第一气体供应部分提供第二反应气体，来自第二气体供应部分的氧化气体和分离气体。