公开(公告)号：US20240387176A1

公开(公告)日：2024-11-21

申请号：US18688382

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Noboru OOIKE ,  Kiyotaka IMAI ,  Yoshihiro HIROTA ,  Motoyuki SATO

IPC: H01L21/18 ,  B23K26/53 ,  B23K101/40

Abstract: A stacked substrate for laser lift-off includes a first substrate that transmits a laser beam, a first insulating layer that absorbs the laser beam, a first polysilicon layer that transmits the laser beam, a second insulating layer that absorbs the laser beam, a second polysilicon layer that transmits the laser beam, and a first device layer in an order. The stacked substrate includes a first electrode penetrating the first insulating layer to electrically connect the first substrate and the first polysilicon layer, and a second electrode penetrating the second insulating layer to electrically connect the first polysilicon layer and the second polysilicon layer. The first electrode and the second electrode contain a material that transmits the laser beam, and are positioned apart from each other without being overlapped when viewed from a top.

公开(公告)号：US20240413146A1

公开(公告)日：2024-12-12

申请号：US18699419

申请日：2022-10-13

Applicant: Tokyo Electron Limited

Inventor： Tetsu OHTOU ,  Kiyotaka IMAI ,  Tomonari YAMAMOTO ,  Takuo KAWAUCHI ,  Yoshihiro TSUTSUMI

IPC: H01L27/02 ,  H01L21/8234 ,  H01L23/528 ,  H01L27/088

Abstract: A method of manufacturing a semiconductor device includes forming a laminated film by laminating an N-type channel and a P-type channel on a substrate; performing patterning on the laminated film; forming a source and a drain on a front surface side; bonding a new substrate on the front surface side and removing the substrate on a back surface side; forming a source and a drain on the back surface side; and a step of forming a gate on the back surface side.

公开(公告)号：US20250006229A1

公开(公告)日：2025-01-02

申请号：US18828820

申请日：2024-09-09

Applicant: Tokyo Electron Limited

Inventor： Motoyuki SATO ,  Kiyotaka IMAI

IPC: G11C5/06 ,  H10B12/00

Abstract: Provided is a semiconductor memory device including a first die and a second die disposed on the first die. The first die includes a substrate, a memory cell array having a plurality of memory cells disposed along a first direction perpendicular to a main surface of the substrate, a plurality of first conductive lines electrically connected to the memory cell array and extending in the first direction, the first conductive lines being bit lines or word lines, and a bonding layer having a plurality of bonding pads electrically connected to the plurality of first conductive lines, respectively. At least one of the plurality of bonding pads is provided at a position shifted from the first conductive line to which the at least one bonding pad is connected, when viewed from the first direction. The second die is provided on the bonding layer.

公开(公告)号：US20240412970A1

公开(公告)日：2024-12-12

申请号：US18697569

申请日：2022-10-04

Applicant: Tokyo Electron Limited

Inventor： Kiyotaka IMAI ,  Motoyuki SATO ,  Yoshihiro HIROTA ,  Takuya HIGUCHI

IPC: H01L21/02 ,  H10B43/20 ,  H10B43/35 ,  H10B43/40

Abstract: A manufacturing method for a semiconductor device including a first semiconductor element and a second semiconductor element, includes the steps of forming an insulating layer on a first substrate having a first elastic modulus higher than a second elastic modulus, forming a first semiconductor element having a first bonding surface on the insulating layer, forming a second semiconductor element having a second bonding surface on a second substrate having the second elastic modulus, bonding the first bonding surface and the second bonding surface to each other to form a laminate of the first semiconductor element and the second semiconductor element, and removing the first substrate from the laminate.

公开(公告)号：US20220199463A1

公开(公告)日：2022-06-23

申请号：US17654838

申请日：2022-03-15

Applicant: Tokyo Electron Limited

Inventor： Shimpei YAMAGUCHI ,  Kiyotaka IMAI ,  Atsushi TSUBOI

IPC: H01L21/768 ,  H01L23/522

Abstract: A method of manufacturing a semiconductor device includes: forming a first film containing carbon over a silicon nitride film and a first conductive film; forming a first silicon oxide film surrounding the first film over the silicon nitride film and the first conductive film; removing the first film to form, in the first silicon oxide film, a first opening that exposes at least a part of the silicon nitride film and at least a part of the first conductive film; and forming a second conductive film on and in contact with the first conductive film in the first opening.