公开(公告)号：US20250154643A1

公开(公告)日：2025-05-15

申请号：US18937950

申请日：2024-11-05

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Ryota Yonezawa ,  Yuji Otsuki ,  Hidenao Suzuki ,  Robert D. Clark ,  Gyanaranjan Pattanaik

IPC: C23C16/04 ,  C23C16/16 ,  C23C16/455 ,  H01L21/768

Abstract: Method for area selective deposition (ASD) on a substrate containing a growth surface that is exposed and a non-growth surface that is exposed. The method includes cyclical exposures of a deposition gas containing a metal carbonyl precursor, the metal carbonyl precursor decomposing on the growth surface such that a metal film is deposited on the growth surface and carbon monoxide (CO) gas is released, and an inhibitor gas after stopping the flow of the deposition gas to the substrate. The cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate is repeated to selectively form the metal film on the growth surface relative to the non-growth surface, where the inhibitor gas increases the selectivity of the metal film formed on the growth surface when compared to the selectivity of the metal film formed on the growth surface without the inhibitor gas.

公开(公告)号：US11626330B2

公开(公告)日：2023-04-11

申请号：US17303920

申请日：2021-06-10

Applicant: Tokyo Electron Limited

Inventor： Yuji Otsuki ,  Munehito Kagaya ,  Yusuke Suzuki

IPC: G01N21/35 ,  H01L21/66 ,  G01N21/3563 ,  G01N21/84

Abstract: A film forming method includes: a first measurement process of measuring a substrate on which a pattern including recesses is formed using infrared spectroscopy; a film formation process of forming a film on the substrate after the first measurement process; a second measurement process of measuring the substrate using infrared spectroscopy after the film formation process; and an extraction process of extracting difference data between measurement data obtained in the first measurement process and measurement data obtained in the second measurement process.

公开(公告)号：US20240363410A1

公开(公告)日：2024-10-31

申请号：US18620326

申请日：2024-03-28

Applicant: Tokyo Electron Limited

Inventor： Ryota Yonezawa ,  Kai-Hung Yu ,  Yuji Otsuki ,  Kenichi Imakita ,  Atsushi Gomi ,  Kohichi Satoh ,  Tadahiro Ishizaka ,  Takashi Sakuma ,  Hidenao Suzuki

IPC: H01L21/768

CPC classification number: H01L21/76897 ,  H01L21/76804 ,  H01L21/76805

Abstract: A method for forming a semiconductor device can include providing a substrate including a via in a dielectric layer, forming a ruthenium metal plug in the via, and at least part of the ruthenium metal plug can be formed directly on the dielectric layer in the via, forming a metal cap layer directly on the ruthenium metal plug, and forming a metallization layer, such as a copper-containing trench, over the ruthenium metal plug, such that the metal cap layer is between the metallization layer and the ruthenium metal plug, which can prevent intermixing of the ruthenium of the ruthenium metal plug with the metal or metals in the metallization layer.