公开(公告)号：US11658008B2

公开(公告)日：2023-05-23

申请号：US17286364

申请日：2019-10-17

Applicant: Tokyo Electron Limited

Inventor： Munehito Kagaya ,  Yusuke Suzuki ,  Shinya Iwashita ,  Tadashi Mitsunari

IPC: C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01J37/32174 ,  C23C16/345 ,  C23C16/405 ,  C23C16/4586 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32724 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02186 ,  H01L21/02274 ,  H01J2237/3321

Abstract: When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

公开(公告)号：US11626330B2

公开(公告)日：2023-04-11

申请号：US17303920

申请日：2021-06-10

Applicant: Tokyo Electron Limited

Inventor： Yuji Otsuki ,  Munehito Kagaya ,  Yusuke Suzuki

IPC: G01N21/35 ,  H01L21/66 ,  G01N21/3563 ,  G01N21/84

Abstract: A film forming method includes: a first measurement process of measuring a substrate on which a pattern including recesses is formed using infrared spectroscopy; a film formation process of forming a film on the substrate after the first measurement process; a second measurement process of measuring the substrate using infrared spectroscopy after the film formation process; and an extraction process of extracting difference data between measurement data obtained in the first measurement process and measurement data obtained in the second measurement process.

公开(公告)号：US10309005B2

公开(公告)日：2019-06-04

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko Kojima ,  Hiroshi Sone ,  Atsushi Gomi ,  Kanto Nakamura ,  Toru Kitada ,  Yasunobu Suzuki ,  Yusuke Suzuki ,  Koichi Takatsuki ,  Tatsuo Hirasawa ,  Keisuke Sato ,  Chiaki Yasumuro ,  Atsushi Shimada

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/16 ,  C23C14/08 ,  C23C14/00 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

公开(公告)号：US11414753B2

公开(公告)日：2022-08-16

申请号：US17086634

申请日：2020-11-02

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Takeshi Oyama ,  Kentaro Oshimo ,  Yusuke Suzuki ,  Jun Ogawa

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  B08B9/00

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

公开(公告)号：US09721771B2

公开(公告)日：2017-08-01

申请号：US15060453

申请日：2016-03-03

Applicant: Tokyo Electron Limited

Inventor： Yusuke Suzuki

IPC: C23C14/35 ,  H01J37/34

CPC classification number: H01J37/345 ,  C23C14/352 ,  H01J37/3447

Abstract: A film forming apparatus includes a processing chamber, a gas supply unit, a stage, at least one holder, a power supply, at least one magnet and a magnet rotation unit. The gas supply unit is configured to supply a gas into the processing chamber. The stage is provided in the processing chamber, and has a center coinciding with a central axis which extends in a vertical direction. The stage is configured to cool the object to about −50° C. or below. Each holder is configured to hold a target, and extends in an annular shape above the stage inside the processing chamber. The power supply is configured to generate a voltage to be applied to the target. Each magnet is provided outside the processing chamber and faces the target. The magnet rotation unit is configured to rotate the magnet about the central axis.