Power amplifier
    3.
    发明授权
    Power amplifier 有权
    功率放大器

    公开(公告)号:US07046091B2

    公开(公告)日:2006-05-16

    申请号:US10797198

    申请日:2004-03-11

    IPC分类号: H03F3/04

    摘要: A power amplifier able to minimize the deterioration of the linearity with respect to fluctuations in ambient temperature, wherein a first terminal of a first resistance element and a first terminal of a second resistance with a temperature coefficient smaller than that of the first resistance element are connected, the connection point is connected to a gate terminal of an FET, a second terminal of the first resistance element is connected to a bias voltage supply terminal, a second terminal of the second resistance element is connected to the ground potential, a drain terminal of the FET is connected to a power source voltage supply terminal, a source terminal is connected to the ground potential, and the FET and the first resistance element are constituted by semiconductor devices formed on the same semiconductor substrate.

    摘要翻译: 一种功率放大器,其能够使相对于环境温度波动的线性的劣化最小化,其中第一电阻元件的第一端子和具有小于第一电阻元件的温度系数的第二电阻的第一端子被连接 连接点连接到FET的栅极端子,第一电阻元件的第二端子连接到偏置电压端子,第二电阻元件的第二端子连接到地电位,漏极端子 FET连接到电源电压端子,源极端子接地电位,FET和第一电阻元件由形成在同一半导体衬底上的半导体器件构成。