公开(公告)号：US20180013465A1

公开(公告)日：2018-01-11

申请号：US15639121

申请日：2017-06-30

申请人： Qorvo US, Inc.

发明人： Jean-Frederic Chiron ,  Nadim Khlat

IPC分类号： H04B1/48 ,  H03F3/193 ,  H03F1/30 ,  H03F3/16 ,  H03L7/085 ,  H03G3/30

CPC分类号： H04B1/48 ,  H03F1/0261 ,  H03F1/306 ,  H03F3/16 ,  H03F3/19 ,  H03F3/1935 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/102 ,  H03F2200/111 ,  H03F2200/451 ,  H03G3/30 ,  H03G3/3042 ,  H03L7/085

摘要： Circuitry includes a first RF power amplifier, a second RF power amplifier, a third RF power amplifier, a first bias signal generator, and a second bias signal generator. The first RF power amplifier and the second RF power amplifier are each configured to amplify RF signals for transmission in a first carrier network. The third RF power amplifier is configured to amplify RF signals for transmission in a second carrier network. In a first mode, the first bias signal generator provides a bias signal to the first RF power amplifier and the second bias signal generator provides a bias signal to the second RF power amplifier. In a second mode, the first bias signal generator and the second bias signal generator each provide a portion of a bias signal to the third RF power amplifier.

公开(公告)号：US20170092640A1

公开(公告)日：2017-03-30

申请号：US14865526

申请日：2015-09-25

申请人： SANKEN ELECTRIC CO., LTD.

发明人： Hironori Aoki ,  Shuichi KANEKO

IPC分类号： H01L27/06 ,  H01L49/02 ,  H01L29/20

CPC分类号： H01L28/20 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/2003 ,  H03F1/223 ,  H03F1/226 ,  H03F1/301 ,  H03F1/306 ,  H03F3/3069 ,  H03F3/4508 ,  H03F3/45596 ,  H03F2203/30078 ,  H03F2203/30111

摘要： Semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits. A semiconductor leakage current that increases with temperature may be compensated by a fabricated resistor such as a boron doped polysilicon resistor that is electrically connected to compensate the leakage current in the pathway.

公开(公告)号：US08896382B2

公开(公告)日：2014-11-25

申请号：US13716130

申请日：2012-12-15

申请人： Fujitsu Limited

发明人： Tsuneaki Tadano

IPC分类号： H03F3/04 ,  H03F3/68 ,  H03F3/19 ,  H03F1/02 ,  H03F1/30 ,  H03F3/24

CPC分类号： H03F3/68 ,  H03F1/0288 ,  H03F1/306 ,  H03F3/04 ,  H03F3/19 ,  H03F3/245 ,  H03F2200/15 ,  H03F2200/18

摘要： In an amplification device, an amplification unit has a transistor and amplifies a signal that is input. A control unit applies, when a power source is turned on, a pinch-off voltage to a gate of the transistor before applying a drain bias voltage to a drain of the transistor and then applies a gate bias voltage to the gate of the transistor.

摘要翻译： 在放大装置中，放大单元具有晶体管并放大输入的信号。 当在晶体管的漏极施加漏极偏置电压之前，控制单元在电源接通时施加针对晶体管的栅极的钳位电压，然后将栅极偏置电压施加到晶体管的栅极。

公开(公告)号：US08223036B2

公开(公告)日：2012-07-17

申请号：US12192324

申请日：2008-08-15

申请人： David J. Mitchell ,  Anand A. Kulkarni ,  Ramesh Subramanian ,  Edward R. Roesch ,  Rod Waits ,  Roberto Schupbach ,  John R. Fraley ,  Alexander B. Lostetter ,  Brice McPherson ,  Bryon Western

发明人： David J. Mitchell ,  Anand A. Kulkarni ,  Ramesh Subramanian ,  Edward R. Roesch ,  Rod Waits ,  Roberto Schupbach ,  John R. Fraley ,  Alexander B. Lostetter ,  Brice McPherson ,  Bryon Western

IPC分类号： H04Q9/00 ,  F02C6/00 ,  H03F3/04

CPC分类号： G01D3/036 ,  G01K1/024 ,  G01K1/12 ,  G01K1/20 ,  G01K2205/00 ,  G01L1/2281 ,  H03F1/306 ,  H03F2200/18 ,  H03F2200/447

摘要： In a telemetry system for use in an engine, a circuit structure (34) affixed to a moving part (20) of the engine is disposed for amplifying information sensed about a condition of the part and transmitting the sensed information to a receiver external to the engine. The circuit structure is adapted for the high temperature environment of the engine and includes a differential amplifier (102, 111) having an input for receiving a signal from a sensor (101, 110) disposed on the part. A voltage controlled oscillator (104, 115) with an input coupled to the output of the amplifier produces an oscillatory signal having a frequency representative of the sensed condition. A buffer (105, 116) with an input coupled to the output of the oscillator buffers the oscillatory signal, which is then coupled to an antenna (26) for transmitting the information to the receiver.

摘要翻译： 在用于发动机的遥测系统中，固定在发动机的运动部分（20）上的电路结构（34）被设置用于放大关于部件的状况的感测信息，并将感测到的信息传送到 发动机。 电路结构适用于发动机的高温环境，并且包括具有用于从设置在该部件上的传感器（101,110）接收信号的输入的差分放大器（102,111）。 具有耦合到放大器的输出的输入端的压控振荡器（104,115）产生具有表示感测状态的频率的振荡信号。 具有耦合到振荡器的输出的输入端的缓冲器（105,116）缓冲振荡信号，然后振荡信号被耦合到用于将信息发送到接收器的天线（26）。

公开(公告)号：US07388428B2

公开(公告)日：2008-06-17

申请号：US11289567

申请日：2005-11-30

申请人： Dirk Wiegner ,  Thomas Merk

发明人： Dirk Wiegner ,  Thomas Merk

IPC分类号： H03G3/30

CPC分类号： H03F3/193 ,  H03F1/301 ,  H03F1/306 ,  H03F1/34 ,  H03F1/48 ,  H03F3/1935 ,  H03F2200/111 ,  H03F2200/117 ,  H03F2200/141 ,  H03F2200/36 ,  H03G1/007

摘要： The present invention relates to a power amplifier for amplifying an electronic input signal (51) and a multi-band capable frontend with such power amplifier. The power amplifier comprises an amplifier transistor stage (1) having an input (52) and an output (53) and a feedback loop (4) placed between the output (53) and the input (52) of the amplifier transistor stage (1). The feedback loop (4) comprises a capacitor (41) and a resistive element (44) in a RF path and an inductive element (42) in a DC feed path, wherein said resistive element comprises a feedback transistor (45) arranged as variable resistor within the feedback loop, and a bias control circuit (46).

摘要翻译： 本发明涉及用这种功率放大器放大电子输入信号（51）和具有多频带能力的前端的功率放大器。 功率放大器包括具有输入（52）和输出（53）的放大器晶体管级（1）和放置在放大器晶体管级（1）的输出（53）和输入端（52）之间的反馈环路（4） ）。 反馈环路（4）包括RF通路中的电容器（41）和电阻元件（44）以及DC馈电路径中的电感元件（42），其中所述电阻元件包括布置为可变的反馈晶体管（45） 反馈环路内的电阻器以及偏置控制电路（46）。

公开(公告)号：US07154337B2

公开(公告)日：2006-12-26

申请号：US10977007

申请日：2004-10-28

申请人： Scott M. Heston

发明人： Scott M. Heston

IPC分类号： H03G3/10

CPC分类号： H03F3/217 ,  H03F1/301 ,  H03F1/306 ,  H03F3/24 ,  H03F2200/15 ,  H03F2200/24 ,  H03F2200/27

摘要： According to one embodiment of the present invention, an amplifier includes an amplifying transistor coupled to a ground and operable to amplify a received signal. One or more bias components provide a bias resistance for the amplifying transistor. The one or more bias components include a control modulator coupled in series between the amplifying transistor and the ground. The control modulator receives a control signal and modulates the amplifying transistor in response to the control signal.

摘要翻译： 根据本发明的一个实施例，放大器包括耦合到地并可操作以放大接收信号的放大晶体管。 一个或多个偏置组件为放大晶体管提供偏置电阻。 一个或多个偏置组件包括串联耦合在放大晶体管和地之间的控制调制器。 控制调制器接收控制信号并响应于控制信号调制放大晶体管。

公开(公告)号：US20050134389A1

公开(公告)日：2005-06-23

申请号：US10746666

申请日：2003-12-23

申请人： Daniel Scherrer ,  Jason Breitbarth ,  David Schmelzer ,  Morgan Culver ,  Donald D'Avanzo

发明人： Daniel Scherrer ,  Jason Breitbarth ,  David Schmelzer ,  Morgan Culver ,  Donald D'Avanzo

IPC分类号： H03F1/30 ,  H03F3/68

CPC分类号： H03F1/306 ,  H03F2200/288

摘要： A resistive level-shifting biasing network is used with a capacitor in parallel to couple FET-based amplifier stages from DC to several GHz in a multi-stage amplifier. The output of the first amplifier stage is connected to the input of the second amplifier stage without a blocking capacitor or level-shifting diodes, allowing a portion of the drain current for the first amplifier stage to be supplied from the second amplifier stage. In a particular embodiment, a distributed amplifier achieved over 20 dB gain from DC to about 80 GHz using three traveling wave amplifier chips.

摘要翻译： 在多级放大器中，使用电容器并联电容器将基于FET的放大器级从DC耦合到几GHz。 第一放大器级的输出端连接到第二放大器级的输入，而没有阻塞电容器或电平移位二极管，允许第一放大器级的漏极电流的一部分从第二放大级提供。 在特定实施例中，分布式放大器使用三个行波放大器芯片实现从DC到大约80GHz的20dB增益。

公开(公告)号：US20050088236A1

公开(公告)日：2005-04-28

申请号：US10975431

申请日：2004-10-29

申请人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

发明人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

IPC分类号： H03F3/68 ,  H03F1/02 ,  H03F1/30 ,  H03F1/32 ,  H03F3/19 ,  H03F3/193 ,  H03F3/213 ,  H03G3/10

CPC分类号： H03F1/56 ,  H03F1/0222 ,  H03F1/0261 ,  H03F1/0266 ,  H03F1/301 ,  H03F1/302 ,  H03F1/306 ,  H03F3/19 ,  H03F3/1935 ,  H03F2200/318 ,  H03F2200/453

摘要： A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.

摘要翻译： 提供了一种CDMA系统，其包括具有DC电流放大器的功率放大器模块。 直流和电流放大器检测输入信号的直流分量，并放大该检测到的直流分量。 功率放大器模块还包括放大器，其接收由直流电流放大器放大的电流作为输入电流。 提供给DC电流放大器的输入信号响应于输入功率电平而改变。

公开(公告)号：US06873830B2

公开(公告)日：2005-03-29

申请号：US09852273

申请日：2001-05-10

申请人： Masayuki Katakura ,  Hideshi Motoyama

发明人： Masayuki Katakura ,  Hideshi Motoyama

IPC分类号： H03F1/30 ,  H03F3/193 ,  H04B1/04

CPC分类号： H03F1/306 ,  H03F2200/372

摘要： A bias circuit according to the present invention includes a monitoring circuit having a second FET and a resistance connected to a drain of the second FET for monitoring a drain current of a first FET to be supplied with a gate bias; a differential circuit including a third FET having a gate supplied with a reference voltage, a fourth FET having a gate connected to the drain of the second FET, sources of the third FET and the fourth FET being connected to a common point, and resistances connected to drains of the third FET and the fourth FET, respectively; and a fifth FET having a drain connected to the common source of the third FET and the fourth FET; wherein a drain voltage of the third FET is fed back to gates of the first FET and the second FET, and a drain voltage of the fourth FET is fed back to a gate of the fifth FET.

摘要翻译： 根据本发明的偏置电路包括具有第二FET的监控电路和连接到第二FET的漏极的电阻，用于监视要被提供栅极偏压的第一FET的漏极电流; 包括具有提供有参考电压的栅极的第三FET的差分电路，具有连接到第二FET的漏极的栅极的第四FET，第三FET和第四FET的源极连接到公共点，并且电阻连接 分别连接到第三FET和第四FET的漏极; 以及第五FET，其漏极连接到第三FET和第四FET的公共源; 其中所述第三FET的漏极电压被反馈到所述第一FET和所述第二FET的栅极，并且所述第四FET的漏极电压被反馈到所述第五FET的栅极。

公开(公告)号：US06801088B2

公开(公告)日：2004-10-05

申请号：US10364999

申请日：2003-02-12

申请人： Barry R. Allen ,  Yun H. Chung ,  David J. Brunone

发明人： Barry R. Allen ,  Yun H. Chung ,  David J. Brunone

IPC分类号： H03F316

CPC分类号： H03F1/226 ,  H03F1/306 ,  H03F1/342 ,  H03F2200/294 ,  H03F2200/372

摘要： A low noise amplifier topology includes a dual gate transistor device, such as a HEMT device and employs resistive feedback with a DC block associated with the amplifier output to a desired high voltage gain and a low noise figure over a desired range of frequencies.

摘要翻译： 低噪声放大器拓扑包括双栅极晶体管器件，例如HEMT器件，并且采用具有与放大器输出相关联的DC块的电阻反馈到期望的高电压增益和在期望的频率范围上的低噪声系数。