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1.发明申请POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权聚合物化合物，阳离子组成和电阻形成方法公开(公告)号：US20090162784A1
公开(公告)日：2009-06-25
申请号：US11576518
申请日：2005-09-22
申请人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/106 , Y10S430/114 , Y10S430/146
摘要： The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要翻译： 本发明涉及包含至少一种选自由以下通式（A0-1），（A0-2），（A0-3）和（A0-3）和（A0-3）表示的结构单元组成的组的组成单元（a0） A0-4）[其中R表示氢原子或低级烷基]，以及由具有酸解离溶解抑制基团的（α-低级烷基）丙烯酸酯衍生的构成单元（a1）。
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公开(公告)号：US20090029284A1
公开(公告)日：2009-01-29
申请号：US11993444
申请日：2006-06-16
申请人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
发明人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
CPC分类号： H01L21/0273 , G03F7/405
摘要： There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask.The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.
摘要翻译： 提供一种涂覆材料，其使用在基板上形成的图案作为掩模，在蚀刻工艺中提高图案的耐蚀刻性。 该材料是使用在基板上形成的图案作为掩模的蚀刻工艺的图案涂覆材料，其包括在水解时可产生羟基的金属化合物（W）。
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3.发明授权Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效化合物，溶解抑制剂，正型抗蚀剂组合物和形成抗蚀剂图案的方法公开(公告)号：US07943284B2
公开(公告)日：2011-05-17
申请号：US11911341
申请日：2006-04-17
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译： 提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性 型抗蚀剂组合物。 这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。
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公开(公告)号：US07932013B2
公开(公告)日：2011-04-26
申请号：US11993444
申请日：2006-06-16
申请人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
发明人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
CPC分类号： H01L21/0273 , G03F7/405
摘要： There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask.The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.
摘要翻译： 提供一种涂覆材料，其使用在基板上形成的图案作为掩模，在蚀刻工艺中提高图案的耐蚀刻性。 该材料是使用在基板上形成的图案作为掩模的蚀刻工艺的图案涂覆材料，其包括在水解时可产生羟基的金属化合物（W）。
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5.发明授权Polymer compound, positive resist composition and resist pattern forming method 有权高分子化合物，正性抗蚀剂组合物和抗蚀剂图案形成方法公开(公告)号：US07851127B2
公开(公告)日：2010-12-14
申请号：US11576518
申请日：2005-09-22
申请人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/106 , Y10S430/114 , Y10S430/146
摘要： The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要翻译： 本发明涉及包含至少一种选自由以下通式（A0-1），（A0-2），（A0-3）和（A0-3）和（A0-3）表示的结构单元组成的组的组成单元（a0） A0-4）[其中R表示氢原子或低级烷基]，以及由具有酸解离溶解抑制基团的（α-低级烷基）丙烯酸酯衍生的构成单元（a1）。
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6.发明申请COMPOUND, DISSOLUTION INHIBITOR, POSITIVE TYPE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 失效化合物，溶解抑制剂，积极类型抗蚀剂组合物和形成耐药性图案的方法公开(公告)号：US20090081580A1
公开(公告)日：2009-03-26
申请号：US11911341
申请日：2006-04-17
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译： 提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性 型抗蚀剂组合物。 这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。
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7.发明授权Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效化合物，溶解抑制剂，正型抗蚀剂组合物和形成抗蚀剂图案的方法公开(公告)号：US08304163B2
公开(公告)日：2012-11-06
申请号：US12980914
申请日：2010-12-29
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译： 提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性 型抗蚀剂组合物。 这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。
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8.发明授权Pattern-forming method, metal oxide film-forming material and method for using the metal oxide film-forming material 有权图案形成方法，金属氧化物成膜材料和使用金属氧化物成膜材料的方法公开(公告)号：US08349543B2
公开(公告)日：2013-01-08
申请号：US12373714
申请日：2007-06-18
申请人： Shogo Matsumaru , Ryoji Watanabe , Toshiyuki Ogata
发明人： Shogo Matsumaru , Ryoji Watanabe , Toshiyuki Ogata
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/0397 , G03F7/40 , H01L21/0337 , H01L21/0338
摘要： A pattern-forming method, including: forming a first resist film by applying a first chemically amplified resist composition onto a support, forming a plurality of resist patterns by selectively exposing and then developing the first resist film, forming a plurality of coated patterns by forming a coating film composed of a metal oxide film on the surface of each resist pattern, forming a second resist film by applying a second chemically amplified resist composition onto the support having the coated patterns formed thereon, and selectively exposing and then developing the second resist film, thereby forming a pattern composed of the plurality of coated patterns and a resist pattern formed in the second resist film onto the support.
摘要翻译： 一种图案形成方法，包括：通过将第一化学放大抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地暴露然后显影第一抗蚀剂膜形成多个抗蚀剂图案，通过形成 在每个抗蚀剂图案的表面上由金属氧化物膜构成的涂膜，通过将第二化学放大型抗蚀剂组合物施加到其上形成有涂覆图案的载体上形成第二抗蚀剂膜，并选择性地暴露然后显影第二抗蚀剂膜 从而形成由多个涂布图案构成的图案和形成在第二抗蚀剂膜上的抗蚀剂图案到支撑体上。
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9.发明申请PATTERN-FORMING METHOD, METAL OXIDE FILM-FORMING MATERIAL AND METHOD FOR USING THE METAL OXIDE FILM-FORMING MATERIAL 有权图案形成方法，金属氧化物膜形成材料和使用金属氧化物成膜材料的方法公开(公告)号：US20100003622A1
公开(公告)日：2010-01-07
申请号：US12373714
申请日：2007-06-18
申请人： Shogo Matsumaru , Ryoji Watanabe , Toshiyuki Ogata
发明人： Shogo Matsumaru , Ryoji Watanabe , Toshiyuki Ogata
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/0397 , G03F7/40 , H01L21/0337 , H01L21/0338
摘要： A pattern-forming method, including: forming a first resist film by applying a first chemically amplified resist composition onto a support, forming a plurality of resist patterns by selectively exposing and then developing the first resist film, forming a plurality of coated patterns by forming a coating film composed of a metal oxide film on the surface of each resist pattern, forming a second resist film by applying a second chemically amplified resist composition onto the support having the coated patterns formed thereon, and selectively exposing and then developing the second resist film, thereby forming a pattern composed of the plurality of coated patterns and a resist pattern formed in the second resist film onto the support.
摘要翻译： 一种图案形成方法，包括：通过将第一化学放大抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地暴露然后显影第一抗蚀剂膜形成多个抗蚀剂图案，通过形成 在每个抗蚀剂图案的表面上由金属氧化物膜构成的涂膜，通过将第二化学放大型抗蚀剂组合物施加到其上形成有涂覆图案的载体上形成第二抗蚀剂膜，并选择性地暴露然后显影第二抗蚀剂膜 从而形成由多个涂布图案构成的图案和形成在第二抗蚀剂膜上的抗蚀剂图案到支撑体上。
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公开(公告)号：US07851129B2
公开(公告)日：2010-12-14
申请号：US11718091
申请日：2005-09-30
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n′ represents an integer of 1 to 3.
摘要翻译： 该抗蚀剂组合物是含有下述化合物的抗蚀剂组合物，其中具有两个以上酚羟基并且分子量为300〜2,500的多元酚化合物（a）中的酚羟基的一部分或全部氢原子被取代为 选自由以下通式（p1）和（p2）表示的酸解离溶解抑制基团中的至少一种，其中R 1和R 2各自独立地表示支链或环状烷基，并且可以在结构中含有杂原子 ; R3表示氢原子或低级烷基; n'表示1〜3的整数。
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