公开(公告)号：US20160025666A1

公开(公告)日：2016-01-28

申请号：US14337671

申请日：2014-07-22

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Simon J. Ghionea ,  David M. Hull ,  Gabriel L. Smith ,  Jeffrey S. Pulskamp ,  Sarah S. Bedair

IPC: G01N27/26

CPC classification number: G01N27/26 ,  G01R29/12

Abstract: According to embodiments, an electric field sensor having a sensor electrode is constructed of an electrically conductive material and having one or more outwardly protruding pillars. A screen electrode overlies the sensor electrode and has one or more openings which register with the one or more pillars on the sensor electrode. At least one piezoelectric actuator is connected to the screen electrode so that, when excited by a voltage signal, the piezoelectric actuator modulates the screen electrode toward and away from the sensor electrode at the frequency of the periodic voltage signal. An output circuit configured to detect a voltage, a current output, or both, between the sensor electrode and the screen electrode which is proportional in magnitude to the strength of the electric field.

Abstract translation: 根据实施例，具有传感器电极的电场传感器由导电材料构成并具有一个或多个向外突出的支柱。 屏幕电极覆盖在传感器电极上并且具有与传感器电极上的一个或多个柱对准的一个或多个开口。 至少一个压电致动器连接到屏幕电极，使得当由电压信号激发时，压电致动器以周期性电压信号的频率将屏幕电极调节到传感器电极和远离传感器电极。 输出电路，被配置为检测传感器电极和屏幕电极之间的电压，电流输出或两者，其大小与电场的强度成正比。

公开(公告)号：US09880120B2

公开(公告)日：2018-01-30

申请号：US14337671

申请日：2014-07-22

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Simon J. Ghionea ,  David M. Hull ,  Gabriel L. Smith ,  Jeffrey S. Pulskamp ,  Sarah S. Bedair

IPC: G01N27/26 ,  G01R29/12

CPC classification number: G01N27/26 ,  G01R29/12

Abstract: According to embodiments, an electric field sensor having a sensor electrode is constructed of an electrically conductive material and having one or more outwardly protruding pillars. A screen electrode overlies the sensor electrode and has one or more openings which register with the one or more pillars on the sensor electrode. At least one piezoelectric actuator is connected to the screen electrode so that, when excited by a voltage signal, the piezoelectric actuator modulates the screen electrode toward and away from the sensor electrode at the frequency of the periodic voltage signal. An output circuit configured to detect a voltage, a current output, or both, between the sensor electrode and the screen electrode which is proportional in magnitude to the strength of the electric field.

公开(公告)号：US20160276014A1

公开(公告)日：2016-09-22

申请号：US15131881

申请日：2016-04-18

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Glen Richard Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

IPC: G11C11/22 ,  H01L43/10 ,  H01L43/02

CPC classification number: G11C11/221 ,  G11C11/22 ,  G11C11/50 ,  G11C23/00 ,  H01H2057/006 ,  H01L41/094

Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

Abstract translation: 一种铁电机械存储器结构，包括衬底，可在第一位置和至少一个第二位置之间移动的MEMS开关元件，所述MEMS开关元件包括第一和第二电极，位于第一和第二电极之间的铁电材料层， 在第一和第二电极之间施加电压，MEMS开关元件在第一位置和第二位置之间移动，以及仅当MEMS开关元件处于第一位置时与第一电极接触的开关触点，其中选择铁电材料 使得铁电材料层内的剩余应变由第一和第二电极施加到铁电材料的电压电势的历史来控制，其中剩余应变足以将MEMS开关元件保持在第一或第二电极 去除电压时的位置。

公开(公告)号：US10043565B2

公开(公告)日：2018-08-07

申请号：US15131881

申请日：2016-04-18

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Glen Richard Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

IPC: H01L21/02 ,  G11C11/22 ,  G11C11/50 ,  G11C23/00 ,  H01L41/09 ,  H01H57/00

Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.