公开(公告)号：US12009393B2

公开(公告)日：2024-06-11

申请号：US17636336

申请日：2020-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/10 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/1083 ,  H01L27/0924 ,  H01L29/7851

Abstract: A tunnel field effect transistor includes a constant current formation layer, a source region and a drain region provided on the constant current formation layer, a channel layer provided between the source region and the drain region, a gate electrode provided on the channel layer, and a gate insulating film provided between the gate electrode and the channel layer, wherein the source region and the drain region have different conductivity types, and the constant current formation layer forms a constant current between the drain region and the constant current formation layer.

公开(公告)号：US20220344473A1

公开(公告)日：2022-10-27

申请号：US17636336

申请日：2020-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/10 ,  H01L29/78 ,  H01L27/092

Abstract: A tunnel field effect transistor includes a constant current formation layer, a source region and a drain region provided on the constant current formation layer, a channel layer provided between the source region and the drain region, a gate electrode provided on the channel layer, and a gate insulating film provided between the gate electrode and the channel layer, wherein the source region and the drain region have different conductivity types, and the constant current formation layer forms a constant current between the drain region and the constant current formation layer.

公开(公告)号：US20250081564A1

公开(公告)日：2025-03-06

申请号：US18952961

申请日：2024-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/10 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

Abstract: Provided is a transistor including: a constant current formation layer; a channel layer provided on the constant current formation layer; a pair of source/drain regions spaced apart from each other, with the channel layer therebetween on the constant current formation layer; a gate electrode provided on the channel layer; and a gate ferroelectric film provided between the gate electrode and the channel layer.

公开(公告)号：US20240379786A1

公开(公告)日：2024-11-14

申请号：US18780300

申请日：2024-07-22

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H03K19/0948

Abstract: A transistor includes a substrate; a pair of constant current forming regions provided in the substrate; a pair of source/drain regions respectively provided on the pair of constant current forming regions in the substrate; and a gate structure provided between the pair of source/drain regions, wherein any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions.

公开(公告)号：US20220285507A1

公开(公告)日：2022-09-08

申请号：US17636026

申请日：2020-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/417 ,  H03K19/0948 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238

Abstract: A transistor includes a substrate; a pair of constant current forming regions provided in the substrate; a pair of source/drain regions respectively provided on the pair of constant current forming regions in the substrate; and a gate structure provided between the pair of source/drain regions, wherein any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions.

公开(公告)号：US12154950B2

公开(公告)日：2024-11-26

申请号：US17636342

申请日：2020-11-19

Applicant: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/10 ,  H01L29/66

Abstract: Provided is a transistor including: a constant current formation layer; a channel layer provided on the constant current formation layer; a pair of source/drain regions spaced apart from each other, with the channel layer therebetween on the constant current formation layer; a gate electrode provided on the channel layer; and a gate ferroelectric film provided between the gate electrode and the channel layer.

公开(公告)号：US12068381B2

公开(公告)日：2024-08-20

申请号：US17636026

申请日：2020-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H03K19/0948

CPC classification number: H01L29/41791 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7851 ,  H03K19/0948

Abstract: A transistor includes a substrate; a pair of constant current forming regions provided in the substrate; a pair of source/drain regions respectively provided on the pair of constant current forming regions in the substrate; and a gate structure provided between the pair of source/drain regions, wherein any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions.

公开(公告)号：US20220285497A1

公开(公告)日：2022-09-08

申请号：US17636342

申请日：2020-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/10 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66

Abstract: Provided is a transistor including: a constant current formation layer; a channel layer provided on the constant current formation layer; a pair of source/drain regions spaced apart from each other, with the channel layer therebetween on the constant current formation layer; a gate electrode provided on the channel layer; and a gate ferroelectric film provided between the gate electrode and the channel layer.

公开(公告)号：US20220285484A1

公开(公告)日：2022-09-08

申请号：US17636328

申请日：2020-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/06 ,  H01L21/265 ,  H01L27/092 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: A transistor includes: a substrate; a constant current formation layer provided on the substrate; a pair of source/drain patterns provided on the constant current formation layer; a gate electrode provided between the pair of source/drain patterns; a channel pattern extending in a direction between the pair of source/drain patterns; and a gate insulating layer surrounding the channel pattern, wherein the channel pattern penetrates the gate insulating layer and the gate electrode and is electrically connected to the source pattern and the drain pattern, the gate insulating layer separates the channel pattern and the gate electrode from each other, the constant current formation layer generates a constant current between the drain pattern and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

公开(公告)号：US20230006054A1

公开(公告)日：2023-01-05

申请号：US17673766

申请日：2022-02-16

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/66 ,  H01L27/092 ,  H01L29/786

Abstract: A tunnel field effect transistor includes a source region and a drain region, positioned on a substrate, a channel region positioned between the source region and the drain region and having a first length in a first direction, a gate electrode positioned on the channel region, and a gate insulating layer positioned between the channel region and the gate electrode, wherein the source region is doped with impurities of a first conductivity type and the drain region is doped with impurities of a second conductivity type that is different from the first conductivity type, and one of the source region and the drain region includes an extension region extending toward the other region, the extension region being positioned under the channel region to form a constant current independent of a gate voltage of the gate electrode.