公开(公告)号：US20240234572A1

公开(公告)日：2024-07-11

申请号：US18108019

申请日：2023-02-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Liang-An Huang ,  Ming-Hua Tsai ,  Wen-Fang Lee ,  Chin-Chia Kuo ,  Jung Han ,  Chun-Lin Chen ,  Ching-Chung Yang ,  Nien-Chung Li

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7835 ,  H01L29/1033 ,  H01L29/42364 ,  H01L29/7801

Abstract: An extended drain metal oxide semiconductor transistor includes a substrate. A gate is disposed on the substrate. A source doped region is disposed in the substrate at one side of the gate. A drain doped region is disposed in the substrate at another side of the gate. A thin gate dielectric layer is disposed under the gate. A thick gate dielectric layer is disposed under the gate. The thick gate dielectric layer extends from the bottom of the gate to contact the drain doped region. A second conductive type first well is disposed in the substrate and surrounds the source doped region and the drain doped region. A deep well is disposed within the substrate and surrounds the second conductive type first well.

公开(公告)号：US20210134679A1

公开(公告)日：2021-05-06

申请号：US16667921

申请日：2019-10-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Cheng Yang ,  Yi-Han Su ,  Sheng-Chen Chung ,  Chen-An Kuo ,  Chun-Lin Chen ,  Chiu-Te Lee ,  Chih-Chung Wang

IPC: H01L21/8234 ,  H01L21/8249

Abstract: A gate oxide forming process includes the following steps. A substrate including a first area and a second area is provided. A first oxide layer, a silicon containing cap layer and a second oxide layer on the substrate of the first area and the second area are sequentially and blanketly formed. The silicon containing cap layer and the second oxide layer in the first area are removed. An oxidation process is performed to oxidize the silicon containing cap layer and a gate oxide layer is formed in the second area.

公开(公告)号：US10985071B1

公开(公告)日：2021-04-20

申请号：US16667921

申请日：2019-10-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Cheng Yang ,  Yi-Han Su ,  Sheng-Chen Chung ,  Chen-An Kuo ,  Chun-Lin Chen ,  Chiu-Te Lee ,  Chih-Chung Wang

IPC: H01L21/8234 ,  H01L21/8249 ,  H01L21/8238 ,  H01L21/28

Abstract: A gate oxide forming process includes the following steps. A substrate including a first area and a second area is provided. A first oxide layer, a silicon containing cap layer and a second oxide layer on the substrate of the first area and the second area are sequentially and blanketly formed. The silicon containing cap layer and the second oxide layer in the first area are removed. An oxidation process is performed to oxidize the silicon containing cap layer and a gate oxide layer is formed in the second area.