公开(公告)号：US11462441B2

公开(公告)日：2022-10-04

申请号：US17147477

申请日：2021-01-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Wei Su ,  Hao-Che Feng ,  Hsuan-Tai Hsu ,  Chun-Yu Chen ,  Wei-Hao Huang ,  Bin-Siang Tsai ,  Ting-An Chien

IPC: H01L21/8234 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/775 ,  H01L29/06 ,  H01L21/3065

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a fin-shaped structure on a substrate, forming a dielectric layer surrounding the fin-shaped structure, performing an anneal process to transform the dielectric layer into a shallow trench isolation (STI), removing the fin-shaped structure to form a trench, and forming a stack structure in the trench. Preferably, the stack structure includes a first semiconductor layer on the fin-shaped structure and a second semiconductor layer on the first semiconductor layer and the first semiconductor layer and the second semiconductor layer include different materials.

公开(公告)号：US20250098238A1

公开(公告)日：2025-03-20

申请号：US18383035

申请日：2023-10-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ting Chiang ,  Tien-Shan Hsu ,  Po-Chang Lin ,  Lung-En Kuo ,  Hao-Che Feng ,  Ping-Wei Huang

IPC: H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a first fin-shaped structure and a second fin-shaped structure on a substrate, a bump between the first fin-shaped structure and the second fin-shaped structure, a first recess between the first fin-shaped structure and the bump, and a second recess between the second fin-shaped structure and the bump. Preferably, a top surface of the bump includes a curve concave upward, a width of the bump is greater than twice the width of the first fin-shaped structure, and a height of the bump is less than one fourth of the height of the first fin-shaped structure.

公开(公告)号：US20220189770A1

公开(公告)日：2022-06-16

申请号：US17147477

申请日：2021-01-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Wei Su ,  Hao-Che Feng ,  Hsuan-Tai Hsu ,  Chun-Yu Chen ,  Wei-Hao Huang ,  Bin-Siang Tsai ,  Ting-An Chien

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/762

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a fin-shaped structure on a substrate, forming a dielectric layer surrounding the fin-shaped structure, performing an anneal process to transform the dielectric layer into a shallow trench isolation (STI), removing the fin-shaped structure to form a trench, and forming a stack structure in the trench. Preferably, the stack structure includes a first semiconductor layer on the fin-shaped structure and a second semiconductor layer on the first semiconductor layer and the first semiconductor layer and the second semiconductor layer include different materials.