公开(公告)号：US20190122920A1

公开(公告)日：2019-04-25

申请号：US16226498

申请日：2018-12-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Hsuan-Tai Hsu ,  Kuan-Hsuan Ku

IPC: H01L21/768 ,  H01L29/417 ,  H01L23/522 ,  H01L21/311

Abstract: A method of fabricating a contact hole structure includes providing a substrate with an epitaxial layer embedded therein. Next, an interlayer dielectric is formed to cover the substrate. After that, a first hole is formed in the interlayer dielectric and the epitaxial layer. Later, a mask layer is formed to cover a sidewall of the first hole and expose a bottom of the first hole. Subsequently, a second hole is formed by etching the epitaxial layer at the bottom of the first hole and taking the mask layer and the interlayer dielectric as a mask, wherein the first hole and the second hole form a contact hole. Then, the mask layer is removed. Finally, a silicide layer is formed to cover the contact hole.

公开(公告)号：US11462441B2

公开(公告)日：2022-10-04

申请号：US17147477

申请日：2021-01-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Wei Su ,  Hao-Che Feng ,  Hsuan-Tai Hsu ,  Chun-Yu Chen ,  Wei-Hao Huang ,  Bin-Siang Tsai ,  Ting-An Chien

IPC: H01L21/8234 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/775 ,  H01L29/06 ,  H01L21/3065

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a fin-shaped structure on a substrate, forming a dielectric layer surrounding the fin-shaped structure, performing an anneal process to transform the dielectric layer into a shallow trench isolation (STI), removing the fin-shaped structure to form a trench, and forming a stack structure in the trench. Preferably, the stack structure includes a first semiconductor layer on the fin-shaped structure and a second semiconductor layer on the first semiconductor layer and the first semiconductor layer and the second semiconductor layer include different materials.

公开(公告)号：US10483158B2

公开(公告)日：2019-11-19

申请号：US16226498

申请日：2018-12-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Hsuan-Tai Hsu ,  Kuan-Hsuan Ku

IPC: H01L21/768 ,  H01L29/417 ,  H01L23/522 ,  H01L21/311 ,  H01L29/66 ,  H01L29/08 ,  H01L29/78 ,  H01L29/165

Abstract: A method of fabricating a contact hole structure includes providing a substrate with an epitaxial layer embedded therein. Next, an interlayer dielectric is formed to cover the substrate. After that, a first hole is formed in the interlayer dielectric and the epitaxial layer. Later, a mask layer is formed to cover a sidewall of the first hole and expose a bottom of the first hole. Subsequently, a second hole is formed by etching the epitaxial layer at the bottom of the first hole and taking the mask layer and the interlayer dielectric as a mask, wherein the first hole and the second hole form a contact hole. Then, the mask layer is removed. Finally, a silicide layer is formed to cover the contact hole.

公开(公告)号：US20220189770A1

公开(公告)日：2022-06-16

申请号：US17147477

申请日：2021-01-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Wei Su ,  Hao-Che Feng ,  Hsuan-Tai Hsu ,  Chun-Yu Chen ,  Wei-Hao Huang ,  Bin-Siang Tsai ,  Ting-An Chien

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/762

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a fin-shaped structure on a substrate, forming a dielectric layer surrounding the fin-shaped structure, performing an anneal process to transform the dielectric layer into a shallow trench isolation (STI), removing the fin-shaped structure to form a trench, and forming a stack structure in the trench. Preferably, the stack structure includes a first semiconductor layer on the fin-shaped structure and a second semiconductor layer on the first semiconductor layer and the first semiconductor layer and the second semiconductor layer include different materials.

公开(公告)号：US10199260B1

公开(公告)日：2019-02-05

申请号：US15726358

申请日：2017-10-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Hsuan-Tai Hsu ,  Kuan-Hsuan Ku

IPC: H01L21/768 ,  H01L29/417 ,  H01L23/522 ,  H01L21/311

Abstract: A method of fabricating a contact hole structure includes providing a substrate with an epitaxial layer embedded therein. Next, an interlayer dielectric is formed to cover the substrate. After that, a first hole is formed in the interlayer dielectric and the epitaxial layer. Later, a mask layer is formed to cover a sidewall of the first hole and expose a bottom of the first hole. Subsequently, a second hole is formed by etching the epitaxial layer at the bottom of the first hole and taking the mask layer and the interlayer dielectric as a mask, wherein the first hole and the second hole form a contact hole. Then, the mask layer is removed. Finally, a silicide layer is formed to cover the contact hole.