公开(公告)号：US09117847B2

公开(公告)日：2015-08-25

申请号：US14516592

申请日：2014-10-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yuan Hsu ,  Chi Ren ,  Tzeng-Fei Wen

IPC: H01L21/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/788 ,  H01L21/28 ,  H01L27/115 ,  H01L21/266

CPC classification number: H01L29/66825 ,  H01L21/266 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7881 ,  H01L29/7882

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes the steps of: sequentially forming agate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer.

Abstract translation: 公开了制造半导体器件的方法。 该方法包括以下步骤：在半导体衬底上依次形成玛瑙电介质层和第一栅极层，其中栅介电层位于第一栅层和半导体衬底之间; 在所述第一栅极层中形成至少一个开口; 在所述半导体衬底上共形形成第一电介质层，其中所述第一电介质层覆盖所述第一栅极层; 以及形成填充所述开口并与所述第一栅极层重叠的第二栅极层。

公开(公告)号：US20150056768A1

公开(公告)日：2015-02-26

申请号：US14516592

申请日：2014-10-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yuan Hsu ,  CHI Ren ,  Tzeng-Fei Wen

IPC: H01L29/66 ,  H01L21/266 ,  H01L21/28 ,  H01L29/423

CPC classification number: H01L29/66825 ,  H01L21/266 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7881 ,  H01L29/7882

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes the steps of: sequentially forming agate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer.

Abstract translation: 公开了制造半导体器件的方法。 该方法包括以下步骤：在半导体衬底上依次形成玛瑙电介质层和第一栅极层，其中栅介电层位于第一栅层和半导体衬底之间; 在所述第一栅极层中形成至少一个开口; 在所述半导体衬底上共形形成第一电介质层，其中所述第一电介质层覆盖所述第一栅极层; 以及形成填充所述开口并与所述第一栅极层重叠的第二栅极层。