公开(公告)号：US09954099B1

公开(公告)日：2018-04-24

申请号：US15631820

申请日：2017-06-23

Applicant: United Microelectronics Corp.

Inventor： Cheng-Hsun Chung ,  Shih-Teng Huang ,  Tien-Shang Kuo

IPC: H01L29/66 ,  H01L21/00 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/36 ,  H01L23/535 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L29/7816 ,  H01L21/285 ,  H01L21/76895 ,  H01L23/535 ,  H01L29/36 ,  H01L29/402 ,  H01L29/4983 ,  H01L29/512 ,  H01L29/66613 ,  H01L29/66681 ,  H01L29/7824

Abstract: A transistor structure including a gate, a first dielectric layer, a first contact and a second contact is provided. The gate is disposed on a substrate. The first dielectric layer is disposed on the substrate. The first dielectric layer covers a portion of a top surface of the gate. The first contact is electrically connected to the gate. The second contact is disposed on the first dielectric layer. The second contact is electrically connected with the first contact.

公开(公告)号：US20180114858A1

公开(公告)日：2018-04-26

申请号：US15631820

申请日：2017-06-23

Applicant: United Microelectronics Corp.

Inventor： Cheng-Hsun Chung ,  Shih-Teng Huang ,  Tien-Shang Kuo

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/36 ,  H01L23/535 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L29/7816 ,  H01L21/285 ,  H01L21/76895 ,  H01L23/535 ,  H01L29/36 ,  H01L29/402 ,  H01L29/4983 ,  H01L29/512 ,  H01L29/66613 ,  H01L29/66681 ,  H01L29/7824

Abstract: A transistor structure including a gate, a first dielectric layer, a first contact and a second contact is provided. The gate is disposed on a substrate. The first dielectric layer is disposed on the substrate. The first dielectric layer covers a portion of a top surface of the gate. The first contact is electrically connected to the gate. The second contact is disposed on the first dielectric layer. The second contact is electrically connected with the first contact.

公开(公告)号：US09741826B1

公开(公告)日：2017-08-22

申请号：US15299268

申请日：2016-10-20

Applicant: United Microelectronics Corp.

Inventor： Cheng-Hsun Chung ,  Shih-Teng Huang ,  Tien-Shang Kuo

IPC: H01L29/66 ,  H01L21/00 ,  H01L29/78

CPC classification number: H01L29/7816 ,  H01L21/285 ,  H01L21/76895 ,  H01L23/535 ,  H01L29/36 ,  H01L29/402 ,  H01L29/4983 ,  H01L29/512 ,  H01L29/66613 ,  H01L29/66681 ,  H01L29/7824

Abstract: A transistor structure including a substrate, a gate, a first dielectric layer, a first contact and a second contact is provided. The gate is disposed on the substrate. The first dielectric layer is disposed on the substrate. The first dielectric layer covers a portion of a top surface of the gate. The first contact is electrically connected to the gate. The second contact is disposed on the first dielectric layer. The second contact is electrically connected with the first contact.