公开(公告)号：US08883648B1

公开(公告)日：2014-11-11

申请号：US14020948

申请日：2013-09-09

Applicant: United Microelectronics Corp.

Inventor： Ming-Da Hsieh ,  Yu-Tsung Lai ,  Hsuan-Hsu Chen

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76879

Abstract: A manufacturing method of a semiconductor structure is disclosed. The manufacturing method includes the following steps: providing an underlying layer; forming a tri-layered photoresist on the underlying layer, which comprises forming a bottom photoresist layer on the underlying layer, forming a silicon-containing material layer on the bottom photoresist layer, and forming a patterned photoresist layer on the silicon-containing material layer; performing an atomic layer deposition (ALD) process for forming a thin layer on the tri-layered photoresist; and performing an etching process for forming a via hole, which comprises etching the silicon-containing material layer according to the thin layer on the tri-layered photoresist.

Abstract translation: 公开了一种半导体结构的制造方法。 该制造方法包括以下步骤：提供下层; 在下层上形成三层光致抗蚀剂，其包括在下层形成底部光致抗蚀剂层，在底部光致抗蚀剂层上形成含硅材料层，并在含硅材料层上形成图案化的光致抗蚀剂层; 执行在三层光致抗蚀剂上形成薄层的原子层沉积（ALD）工艺; 以及进行用于形成通孔的蚀刻工艺，其包括在三层光致抗蚀剂上根据薄层蚀刻含硅材料层。