公开(公告)号：US10204788B1

公开(公告)日：2019-02-12

申请号：US15859721

申请日：2018-01-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shan Ye ,  Shih-Cheng Chen ,  Tsuo-Wen Lu ,  Tzu-Hsiang Su ,  Po-Jen Chuang

IPC: H01L21/28 ,  H01L21/02 ,  C23C16/455 ,  H01L29/51

Abstract: A method of forming a high dielectric constant (high-k) dielectric layer by atomic layer deposition includes the following steps. Cycles are performed one after another, and each of the cycles sequentially includes performing a first oxygen precursor pulse to supply an oxygen precursor to a substrate disposed in a reactor; performing a first oxygen precursor purge after the first oxygen precursor pulse; performing a chemical precursor pulse to supply a chemical precursor to the substrate after the first oxygen precursor purge; and performing a chemical precursor purge after the chemical precursor pulse. The first oxygen precursor pulse, the first oxygen precursor purge, the chemical precursor pulse, and the chemical precursor purge are repeated by at least 3 cycles. A second oxygen precursor pulse is performed to supply an oxygen precursor to the substrate after the cycles. A second oxygen precursor purge is performed after the second oxygen precursor pulse.

公开(公告)号：US20180083141A1

公开(公告)日：2018-03-22

申请号：US15823616

申请日：2017-11-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Cheng Chen ,  Tsai-Yu Wen ,  Shan Ye ,  Tsuo-Wen Lu

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78391 ,  H01L29/40111 ,  H01L29/4966 ,  H01L29/516 ,  H01L29/517 ,  H01L29/6684

Abstract: A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.

公开(公告)号：US20170358684A1

公开(公告)日：2017-12-14

申请号：US15206319

申请日：2016-07-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Cheng Chen ,  Tsai-Yu Wen ,  Shan Ye ,  Tsuo-Wen Lu

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78391 ,  H01L21/28291 ,  H01L29/4966 ,  H01L29/516 ,  H01L29/517 ,  H01L29/6684

Abstract: A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.

公开(公告)号：US09871136B2

公开(公告)日：2018-01-16

申请号：US15206319

申请日：2016-07-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Cheng Chen ,  Tsai-Yu Wen ,  Shan Ye ,  Tsuo-Wen Lu

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78391 ,  H01L21/28291 ,  H01L29/4966 ,  H01L29/516 ,  H01L29/517 ,  H01L29/6684

Abstract: A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.

公开(公告)号：US09330902B1

公开(公告)日：2016-05-03

申请号：US14731227

申请日：2015-06-04

Applicant: United Microelectronics Corp.

Inventor： Tsai-Yu Wen ,  Shih-Cheng Chen ,  Shan Ye ,  Tsuo-Wen Lu ,  Yu-Ren Wang

IPC: H01L21/3205 ,  H01L21/02 ,  H01L29/66 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/02181 ,  H01L21/0228 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7836

Abstract: A method for forming a HfOx film based on atomic layer deposition (ALD) process includes: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles includes applying HfCl4 pulse and applying H2O pulse over the substrate and a content ratio of HfCl4 to H2O is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film.

Abstract translation: 基于原子层沉积（ALD）工艺形成HfO x膜的方法包括：提供衬底; 根据需要将多个ALD循环分成多个沉积阶段，其中每个ALD循环包括施加HfCl 4脉冲并在衬底上施加H 2 O脉冲，并且HfCl 4与H 2 O的含量比不同并且对于沉积阶段而言增加; 并进行沉积阶段以形成HfO x膜。