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公开(公告)号：US20230352587A1
公开(公告)日：2023-11-02
申请号：US18218098
申请日：2023-07-04
发明人： Kuang-Hsiu Chen , Sung-Yuan Tsai , Chi-Hsuan Tang , Chun-Wei Yu , Yu-Ren Wang
IPC分类号： H01L29/78 , H01L29/08 , H01L29/36 , H01L29/66 , H01L29/423
CPC分类号： H01L29/7848 , H01L29/0847 , H01L29/36 , H01L29/66575 , H01L29/6656 , H01L29/6653 , H01L29/42364
摘要： A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.
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公开(公告)号：US20230268397A1
公开(公告)日：2023-08-24
申请号：US18135206
申请日：2023-04-17
发明人： Yu-Ming Hsu , Yu-Chi Wang , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
IPC分类号： H01L29/15 , H01L29/778
CPC分类号： H01L29/151 , H01L29/7786
摘要： A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
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公开(公告)号：US20230207643A1
公开(公告)日：2023-06-29
申请号：US18113076
申请日：2023-02-23
发明人： Tsung-Mu Yang , Yu-Ren Wang
IPC分类号： H01L29/40 , H01L29/20 , H01L29/205 , H01L29/778 , H01L29/66
CPC分类号： H01L29/408 , H01L29/2003 , H01L29/205 , H01L29/7786 , H01L29/66462
摘要： A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer and includes a sunken surface, so as to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.
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公开(公告)号：US11664426B2
公开(公告)日：2023-05-30
申请号：US17685400
申请日：2022-03-03
发明人： Yu-Ming Hsu , Yu-Chi Wang , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
IPC分类号： H01L29/15 , H01L29/778
CPC分类号： H01L29/151 , H01L29/7786
摘要： A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
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公开(公告)号：US20230058811A1
公开(公告)日：2023-02-23
申请号：US17981499
申请日：2022-11-07
发明人： Fu-Jung Chuang , Po-Jen Chuang , Yu-Ren Wang , Chi-Mao Hsu , Chia-Ming Kuo , Guan-Wei Huang , Chun-Hsien Lin
IPC分类号： H01L21/8238 , H01L27/092 , H01L21/762
摘要： A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.
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公开(公告)号：US20220320292A1
公开(公告)日：2022-10-06
申请号：US17683288
申请日：2022-02-28
发明人： Yu-Ming Hsu , Yu-Chi Wang , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
IPC分类号： H01L29/15 , H01L29/778
摘要： A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
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公开(公告)号：US20220093778A1
公开(公告)日：2022-03-24
申请号：US17100935
申请日：2020-11-22
发明人： Yen-Hsing Chen , Yu-Ming Hsu , Tsung-Mu Yang , Yu-Ren Wang
IPC分类号： H01L29/778 , H01L29/66 , H01L21/67 , H01L21/768
摘要： A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.
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公开(公告)号：US11063135B2
公开(公告)日：2021-07-13
申请号：US15996539
申请日：2018-06-04
发明人： Chia-Ming Kuo , Po-Jen Chuang , Yu-Ren Wang , Ying-Wei Yen , Fu-Jung Chuang , Ya-Yin Hsiao , Nan-Yuan Huang
IPC分类号： H01L29/66 , H01L21/02 , H01L21/265 , H01L21/324 , H01L29/08 , H01L29/78 , H01L29/51 , H01L21/321 , H01L21/3213 , H01L29/423 , H01L29/49 , H01L21/28
摘要： A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.
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公开(公告)号：US10910277B2
公开(公告)日：2021-02-02
申请号：US16802463
申请日：2020-02-26
发明人： Fu-Jung Chuang , Po-Jen Chuang , Yu-Ren Wang , Chi-Mao Hsu , Chia-Ming Kuo , Guan-Wei Huang , Chun-Hsien Lin
IPC分类号： H01L21/00 , H01L21/8238 , H01L27/092 , H01L21/762
摘要： A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.
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公开(公告)号：US10700202B2
公开(公告)日：2020-06-30
申请号：US16172856
申请日：2018-10-28
发明人： Kuang-Hsiu Chen , Sung-Yuan Tsai , Chi-Hsuan Tang , Kai-Hsiang Wang , Chao-Nan Chen , Shi-You Liu , Chun-Wei Yu , Yu-Ren Wang
IPC分类号： H01L29/76 , H01L29/78 , H01L29/165 , H01L29/66 , H01L21/265
摘要： A semiconductor device is disclosed. The semiconductor device comprises a substrate, a gate structure disposed on the substrate, a spacer disposed on the substrate and covering a sidewall of the gate structure, an air gap sandwiched between the spacer and the substrate, and a source/drain region disposed in the substrate and having a faceted surface exposed from the substrate, wherein the faceted surface borders the substrate on a boundary between the air gap and the substrate.
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