公开(公告)号：US10444622B2

公开(公告)日：2019-10-15

申请号：US15892935

申请日：2018-02-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yeh Wu ,  Chia-Wei Huang ,  Yung-Feng Cheng

IPC: G06F17/50 ,  G03F1/70 ,  G03F7/20 ,  G03F1/36

Abstract: A method for generating masks for manufacturing of a semiconductor structure includes the following steps. First, a design pattern is provided to a processor. The design pattern includes at least one first pattern and at least two second patterns shorter than the first pattern, wherein two of the second patterns are arranged in a line along an extending direction of the patterns. Then, the second patterns are elongated by the processor such that the two second patterns arranged in the line are separated from each other by a distance equal to a minimum space of the design pattern. The design pattern is divided into a first set of patterns and a second set of patterns by the processor. A first mask is generated by the processor based on the first set of patterns. A second mask is generated by the processor based on the second set of patterns.

公开(公告)号：US20140331191A1

公开(公告)日：2014-11-06

申请号：US13887377

申请日：2013-05-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yeh Wu ,  Chin-Lung Lin ,  Yao-Jen Fan ,  Wei-Han Chien ,  Chia-Chun Tsai

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36

Abstract: A method of correcting assist features includes the following steps. At first, a first layout pattern is received by a computer system, and the first layout pattern is split into a plurality of first regions. Subsequently, a plurality of assist features are added into the first layout pattern to form a second layout pattern, wherein at least one of the assist features neighboring any one of the edges of the first regions is defined as a selected pattern. Then, the second layout pattern is split into a plurality of second regions. Afterwards, a check step is performed on the second region including the selected pattern, and the second layout pattern is corrected to form a corrected second layout pattern.

Abstract translation: 一种校正辅助功能的方法包括以下步骤。 首先，由计算机系统接收第一布局图案，并且将第一布局图案分割成多个第一区域。 随后，将多个辅助特征添加到第一布局图案中以形成第二布局图案，其中与第一区域的任何边缘相邻的辅助特征中的至少一个被定义为所选择的图案。 然后，第二布局图案被分割成多个第二区域。 然后，对包括所选择的图案的第二区域执行检查步骤，并校正第二布局图案以形成校正的第二布局图案。

公开(公告)号：US09009633B2

公开(公告)日：2015-04-14

申请号：US13887377

申请日：2013-05-06

Applicant: United Microelectronics Corp.

Inventor： Tsung-Yeh Wu ,  Chin-Lung Lin ,  Yao-Jen Fan ,  Wei-Han Chien ,  Chia-Chun Tsai

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G06F17/5081 ,  G03F1/36

Abstract: A method of correcting assist features includes the following steps. At first, a first layout pattern is received by a computer system, and the first layout pattern is split into a plurality of first regions. Subsequently, a plurality of assist features are added into the first layout pattern to form a second layout pattern, wherein at least one of the assist features neighboring any one of the edges of the first regions is defined as a selected pattern. Then, the second layout pattern is split into a plurality of second regions. Afterwards, a check step is performed on the second region including the selected pattern, and the second layout pattern is corrected to form a corrected second layout pattern.

Abstract translation: 一种校正辅助功能的方法包括以下步骤。 首先，由计算机系统接收第一布局图案，并且将第一布局图案分割成多个第一区域。 随后，将多个辅助特征添加到第一布局图案中以形成第二布局图案，其中与第一区域的任何边缘相邻的辅助特征中的至少一个被定义为所选择的图案。 然后，第二布局图案被分割成多个第二区域。 然后，对包括所选择的图案的第二区域执行检查步骤，并校正第二布局图案以形成校正的第二布局图案。

公开(公告)号：US10387602B2

公开(公告)日：2019-08-20

申请号：US15879788

申请日：2018-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yeh Wu ,  Chia-Wei Huang ,  Yung-Feng Cheng

IPC: G06F17/50 ,  H01L21/02 ,  H01L21/033

Abstract: A method for generating masks for manufacturing of a semiconductor structure comprises the following steps. A design pattern for features to be formed on a substrate is divided into a first set of patterns and a second set of patterns. The first set of patterns comprises a first pattern corresponding to a first feature, the second set of patterns comprises two second patterns corresponding to two second features, and the first feature will be arranged between the two second features when the features are formed on a substrate. Two assist feature patterns are added into the first set of patterns. The two assist feature patterns are arranged in locations corresponding to the two second features, respectively. A first mask is generated based on the first set of patterns with the assist feature patterns. A second mask is generated based on the second set of patterns.