Low-Dropout Linear Regulator with Super Transconductance Structure

    公开(公告)号:US20180157283A1

    公开(公告)日:2018-06-07

    申请号:US15690290

    申请日:2017-08-30

    CPC classification number: G05F1/575 H03F3/4521 H03F2203/45288

    Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.

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