公开(公告)号：US11227949B2

公开(公告)日：2022-01-18

申请号：US16877516

申请日：2020-05-19

Applicant: University of Electronic Science and Technology of China

Inventor： Ming Qiao ,  Longfei Liang ,  Yilei Lyu ,  Zhao Qi ,  Bo Zhang

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/04

Abstract: A low specific on-resistance (Ron,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.