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公开(公告)号:US07588949B2
公开(公告)日:2009-09-15
申请号:US11699837
申请日:2007-01-29
申请人: Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
发明人: Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
CPC分类号: G03F7/70625 , G03F7/705
摘要: The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.
摘要翻译: 评估用于测量晶片结构的光学测量模型的优化。 开发了具有度量模型变量的光学测量模型,其包括轮廓模型的轮廓模型参数。 选择计量模型优化的一个或多个目标。 选择要用于评估一个或多个所选目标的一个或多个简档模型参数。 选择要设置为固定值的一个或多个计量模型变量。 一个或多个选定的计量模型变量被设置为固定值。 设置一个或多个所选目标的一个或多个终止标准。 光学测量模型使用一个或多个所选计量模型变量的固定值进行优化。 使用优化的光学测量模型获得一个或多个所选轮廓模型参数的测量。 然后确定所获得的测量是否满足一个或多个终止标准。
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公开(公告)号:US20070135959A1
公开(公告)日:2007-06-14
申请号:US11699837
申请日:2007-01-29
申请人: Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
发明人: Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
IPC分类号: G06F19/00
CPC分类号: G03F7/70625 , G03F7/705
摘要: The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.
摘要翻译: 评估用于测量晶片结构的光学测量模型的优化。 开发了具有度量模型变量的光学测量模型,其包括轮廓模型的轮廓模型参数。 选择计量模型优化的一个或多个目标。 选择要用于评估一个或多个所选目标的一个或多个简档模型参数。 选择要设置为固定值的一个或多个计量模型变量。 一个或多个选定的计量模型变量被设置为固定值。 设置一个或多个所选目标的一个或多个终止标准。 光学测量模型使用一个或多个所选计量模型变量的固定值进行优化。 使用优化的光学测量模型获得一个或多个所选轮廓模型参数的测量。 然后确定所获得的测量是否满足一个或多个终止标准。
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公开(公告)号:US20060064280A1
公开(公告)日:2006-03-23
申请号:US10946729
申请日:2004-09-21
申请人: Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
发明人: Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
IPC分类号: G06F15/00
CPC分类号: G03F7/70625 , G03F7/705
摘要: The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.
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公开(公告)号:US20070198211A1
公开(公告)日:2007-08-23
申请号:US11788735
申请日:2007-04-20
申请人: Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人: Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号: G01B11/02
CPC分类号: G01B11/00
摘要: Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
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公开(公告)号:US07171284B2
公开(公告)日:2007-01-30
申请号:US10946729
申请日:2004-09-21
申请人: Vi Vuong , Emmanuel Drege , Shifang Ll , Junwei Bao
发明人: Vi Vuong , Emmanuel Drege , Shifang Ll , Junwei Bao
CPC分类号: G03F7/70625 , G03F7/705
摘要: The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.
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公开(公告)号:US07505153B2
公开(公告)日:2009-03-17
申请号:US12030166
申请日:2008-02-12
申请人: Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人: Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
CPC分类号: G03F7/70616 , G03F7/705 , G03F7/70625
摘要: A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译: 选择用于晶片中结构的光学测量的轮廓模型,轮廓模型具有与结构的尺寸相关联的一组几何参数。 选择几组参数集合到一组优化参数中。 该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。 从一组优化参数中选择一组选定的优化参数。 所选择的几何参数集合中的参数被用作所选轮廓模型的参数。 根据一个或多个终止标准测试所选的配置文件模型。
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公开(公告)号:US06853942B2
公开(公告)日:2005-02-08
申请号:US10213485
申请日:2002-08-06
申请人: Emmanuel Drege , Junwei Bao , Srinivas Doddi , Vi Vuong
发明人: Emmanuel Drege , Junwei Bao , Srinivas Doddi , Vi Vuong
IPC分类号: G01N21/956 , G06F19/00 , G01B9/02 , G01B11/24 , G06K9/46
CPC分类号: G03F7/70516 , G01N21/956 , G03F7/70625
摘要: To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.
摘要翻译: 为了产生用于半导体结构的光学测量的系数集合,获得用于一组参数的至少三个光学测量信号。 光学测量信号指示从半导体结构衍射的光,并且改变该组参数中的至少一个参数的值以产生每个信号。 获得至少三个光学测量信号之间的功能关系,所述功能关系包括至少三个系数值。 确定来自功能关系的至少三个系数值的至少三组系数。
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公开(公告)号:US07474993B2
公开(公告)日:2009-01-06
申请号:US11788735
申请日:2007-04-20
申请人: Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人: Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
CPC分类号: G01B11/00
摘要: Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译: 可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。 使用选择标准选择波长,并重复选择波长,直到满足终止标准。
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公开(公告)号:US20080151269A1
公开(公告)日:2008-06-26
申请号:US12030166
申请日:2008-02-12
申请人: Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人: Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号: G01B11/14
CPC分类号: G03F7/70616 , G03F7/705 , G03F7/70625
摘要: A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译: 选择用于晶片中结构的光学测量的轮廓模型,轮廓模型具有与结构的尺寸相关联的一组几何参数。 选择几组参数集合到一组优化参数中。 该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。 从一组优化参数中选择一组选定的优化参数。 所选择的几何参数集合中的参数被用作所选轮廓模型的参数。 根据一个或多个终止标准测试所选的配置文件模型。
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公开(公告)号:US07216045B2
公开(公告)日:2007-05-08
申请号:US10162516
申请日:2002-06-03
申请人: Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人: Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
CPC分类号: G01B11/00
摘要: Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译: 可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。 使用选择标准选择波长,并重复选择波长,直到满足终止标准。
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