摘要:
A structure for a detector with a high spatial resolution is characterized not only as integrating on the same chip both PIN diodes and readout circuitry for detecting the charge collected through the individual diodes, but places the junction and collection electrode on opposite ends of the PIN diode. This reduces the fields at the collection electrode, and allows the wells containing the readout circuitry, which should be located as close to the collection electrode as possible to minimize collection electrode capacitance, to be placed in a low field region. The bias voltage required on the wells can then be reduced, and the electrodes for collecting the generated charge can be made smaller.
摘要:
A VLSI radiation/particle detector includes detecting elements based on one or more PIN diodes which are biased for collecting the charge generated by incident radiation or ionizing particles, and readout circuitry integrated on the same chip for detecting the collected charge. The junction of the PIN diode and the well containing the readout circuitry are separated far from each other such that the bias voltage required on the well to direct most generated charge to the collection electrodes can be reduced, and these can be made smaller to improve the detector's spatial resolution.
摘要:
A particle detector has pixels arranged in rows and columns in a array-like formation and readout circuits for determining which of these pixels were hit by an ionizing particle. The pixels each including a PIN diode and charge transferring circuitry are integrated on a common silicon substrate with the readout circuits. Column buses and row buses are provided, associated with the pixels on the same column or row. A priority encoder gives the address of the highest numbered input that is asserted. Electric charge collected by a hit pixel is stored momentarily on a collection electrode and affects the current flow from the column bus to the row bus associated with the pixel. The column buses are sequentially activated and variations in the row currents are examined in parallel. To efficiently and accurately collect charge from the substrate, wells are used to which also contain the transferring circuitry and readout circuits. The wells also provide electrostatic shielding and prevent drain to source transistor punchthrough. The PIN-diodes and the collection electrodes are arranged close to but not connected to the well.