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公开(公告)号:US07368917B2
公开(公告)日:2008-05-06
申请号:US11450456
申请日:2006-06-12
申请人: Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
发明人: Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
IPC分类号: G01N27/62
CPC分类号: G01N27/4148
摘要: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.
摘要翻译: 具有体效应降低的离子传感器的电子电路包括具有输入端子的桥式浮动源电路,反映离子浓度的电位变化的输出端子以及离子敏感场效应晶体管(ISFET) 其中所述ISFET的一个端子与所述输出端子耦合; 用于向桥式电路提供电流的电流镜; 用于接收由电流镜提供的工作电流的第三晶体管,与提供给ISFET的电流相同; 差分放大电路,其中放大电路的一个输入端子以参考电压输入,另一个输入端子与桥式读出电路的输出端相连; 以及第三放大器,以产生补偿体效应,温度和时间漂移效应的差分输出电压。
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公开(公告)号:US20070089988A1
公开(公告)日:2007-04-26
申请号:US11450456
申请日:2006-06-12
申请人: Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
发明人: Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
IPC分类号: G01N27/26
CPC分类号: G01N27/4148
摘要: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.
摘要翻译: 具有体效应降低的离子传感器的电子电路包括具有输入端子的桥式浮动源电路,反映离子浓度的电位变化的输出端子以及离子敏感场效应晶体管(ISFET) 其中所述ISFET的一个端子与所述输出端子耦合; 用于向桥式电路提供电流的电流镜; 用于接收由电流镜提供的工作电流的第三晶体管,与提供给ISFET的电流相同; 差分放大电路,其中放大电路的一个输入端子以参考电压输入,另一个输入端子与桥式读出电路的输出端相连; 以及第三放大器,以产生补偿体效应,温度和时间漂移效应的差分输出电压。
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公开(公告)号:US07582875B2
公开(公告)日:2009-09-01
申请号:US11123708
申请日:2005-05-05
申请人: Massimo Caccia , Leopoldo Conte , Mario Alemi , Chiara Cappellini , Antonello Luigi Airoldi , Carla Bianchi , Raffaele Novario , Wim De Boer , Eugene Grigoriev , Halina Niemiec , Wojciech Kucewicz , Francesco Cannillo , Gilles Clauss , Claude Colledani , Grzegorz Deptuch , Wojciech Dulinski , Piotr Grabiec , Jacek Marczewski , Krzysztof Domanski , Bohdan Jaroszewicz , Krzysztof Kucharski , Laura Badano , Omella Ferrando , Georg Popowski , Agnieszka Zalewska , Adam Czermak
发明人: Massimo Caccia , Leopoldo Conte , Mario Alemi , Chiara Cappellini , Antonello Luigi Airoldi , Carla Bianchi , Raffaele Novario , Wim De Boer , Eugene Grigoriev , Halina Niemiec , Wojciech Kucewicz , Francesco Cannillo , Gilles Clauss , Claude Colledani , Grzegorz Deptuch , Wojciech Dulinski , Piotr Grabiec , Jacek Marczewski , Krzysztof Domanski , Bohdan Jaroszewicz , Krzysztof Kucharski , Laura Badano , Omella Ferrando , Georg Popowski , Agnieszka Zalewska , Adam Czermak
IPC分类号: G01T1/02
CPC分类号: G01T1/026 , H01L27/1443 , H01L27/1446 , H01L27/14601 , H01L27/14609 , H01L27/14643 , H01L27/14658
摘要: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
摘要翻译: 具有至少一个感测单元的至少具有接点感测元件的单片有源像素剂量计。 接点感测元件包括具有第一类型的导电性的感测区域和与感测区域邻接且具有第二类型导电性的电荷收集区域。 感测单元还包括至少部分地重叠并在电荷收集区域外横向延伸的欧姆区域,以及邻接欧姆区域的环形绝缘区域,以形成围绕欧姆区域和电荷收集区域的绝缘结。
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公开(公告)号:US20060043313A1
公开(公告)日:2006-03-02
申请号:US11123708
申请日:2005-05-05
申请人: Massimo Caccia , Leopoldo Conte , Mario Alemi , Chiara Cappellini , Antonello Airoldi , Carla Bianchi , Raffaele Novario , Wim De Boer , Eugene Grigoriev , Halina Niemiec , Wojciech Kucewicz , Francesco Cannillo , Gilles Clauss , Claude Colledani , Grzegorz Deptuch , Wojciech Dulinski , Piotr Grabiec , Jacek Marczewski , Krzysztof Domanski , Bohdan Jaroszewicz , Krzysztof Kucharski , Laura Badano , Omella Ferrando , Georg Popowski , Agnieszka Zalewska , Adam Czermak
发明人: Massimo Caccia , Leopoldo Conte , Mario Alemi , Chiara Cappellini , Antonello Airoldi , Carla Bianchi , Raffaele Novario , Wim De Boer , Eugene Grigoriev , Halina Niemiec , Wojciech Kucewicz , Francesco Cannillo , Gilles Clauss , Claude Colledani , Grzegorz Deptuch , Wojciech Dulinski , Piotr Grabiec , Jacek Marczewski , Krzysztof Domanski , Bohdan Jaroszewicz , Krzysztof Kucharski , Laura Badano , Omella Ferrando , Georg Popowski , Agnieszka Zalewska , Adam Czermak
IPC分类号: H05B33/00
CPC分类号: G01T1/026 , H01L27/1443 , H01L27/1446 , H01L27/14601 , H01L27/14609 , H01L27/14643 , H01L27/14658
摘要: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
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