Electronic circuit for ion sensor with body effect reduction
    1.
    发明授权
    Electronic circuit for ion sensor with body effect reduction 有权
    离子传感器电子电路,减少身体效应

    公开(公告)号:US07368917B2

    公开(公告)日:2008-05-06

    申请号:US11450456

    申请日:2006-06-12

    IPC分类号: G01N27/62

    CPC分类号: G01N27/4148

    摘要: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.

    摘要翻译: 具有体效应降低的离子传感器的电子电路包括具有输入端子的桥式浮动源电路,反映离子浓度的电位变化的输出端子以及离子敏感场效应晶体管(ISFET) 其中所述ISFET的一个端子与所述输出端子耦合; 用于向桥式电路提供电流的电流镜; 用于接收由电流镜提供的工作电流的第三晶体管,与提供给ISFET的电流相同; 差分放大电路,其中放大电路的一个输入端子以参考电压输入,另一个输入端子与桥式读出电路的输出端相连; 以及第三放大器,以产生补偿体效应,温度和时间漂移效应的差分输出电压。

    Electronic circuit for ion sensor with body effect reduction
    2.
    发明申请
    Electronic circuit for ion sensor with body effect reduction 有权
    离子传感器电子电路,减少身体效应

    公开(公告)号:US20070089988A1

    公开(公告)日:2007-04-26

    申请号:US11450456

    申请日:2006-06-12

    IPC分类号: G01N27/26

    CPC分类号: G01N27/4148

    摘要: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.

    摘要翻译: 具有体效应降低的离子传感器的电子电路包括具有输入端子的桥式浮动源电路,反映离子浓度的电位变化的输出端子以及离子敏感场效应晶体管(ISFET) 其中所述ISFET的一个端子与所述输出端子耦合; 用于向桥式电路提供电流的电流镜; 用于接收由电流镜提供的工作电流的第三晶体管,与提供给ISFET的电流相同; 差分放大电路,其中放大电路的一个输入端子以参考电压输入,另一个输入端子与桥式读出电路的输出端相连; 以及第三放大器,以产生补偿体效应,温度和时间漂移效应的差分输出电压。