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公开(公告)号：US20210057640A1
公开(公告)日：2021-02-25
申请号：US16991055
申请日：2020-08-12
Applicant: Winbond Electronics Corp.
Inventor： Wen-Chia Ou , Chih-Chao Huang , Min-Chih Wei , Yu-Ting Chen , Chi-Ching Liu
Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.
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公开(公告)号：US20250072295A1
公开(公告)日：2025-02-27
申请号：US18945580
申请日：2024-11-13
Applicant: Winbond Electronics Corp.
Inventor： Wen-Chia Ou , Chih-Chao Huang , Min-Chih Wei , Yu-Ting Chen , Chi-Ching Liu
Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.
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公开(公告)号：US12193337B2
公开(公告)日：2025-01-07
申请号：US16991055
申请日：2020-08-12
Applicant: Winbond Electronics Corp.
Inventor： Wen-Chia Ou , Chih-Chao Huang , Min-Chih Wei , Yu-Ting Chen , Chi-Ching Liu
Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.
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